Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-19T04:04:23.420Z Has data issue: false hasContentIssue false
  • English
  • Français

High-Resolution Electron Microscopy of Process-Induced Defects in Silicon

Published online by Cambridge University Press:  21 February 2011

Hans Cerva  and
Helmut Oppolzer
Hans Cerva
Affiliation:
Siemens AG, Research Laboratories, Otto Hahn Ring 6, D-8000 München 83, Federal Republic of Germany
Helmut Oppolzer
Affiliation:
Siemens AG, Research Laboratories, Otto Hahn Ring 6, D-8000 München 83, Federal Republic of Germany
Get access

Abstract

Several examples of defect characterization which are of topical inter-est to Si device technology are presented. The results obtained by high-reso-lution electron microscopy (HREM) are discussed in context with the actual defect problem. - Reinvestigation of platelike defects in Si produced by reactive ion etching in hydrogen containing plasmas (CHF3) shows that some of the {111} platelets are of extrinsic nature. The defects contain probably both constituents from the plasma and Si-interstitials created by the impin-ging ions. - A high dose As-implantation forms an amorphous Si surface layer which has a sharply curved amorphous/crystalline (a/c)-interface below the implantation mask edge. Annealing at 900°C leads to formation of vacancy-type defects under the mask edge. This is due to the different regrowth rates on the various lattice planes of the curved a/c-interface. - Metal-silicide pre-cipitation at the SiO2/Si interface reduces the breakdown field strength of thin oxides. The main failure mechanism observed in model experiments is the thinning of the oxide layer thickness. - Additional x-ray peaks which are frequently observed in low-pressure chemical vapour deposited (625 7deg;C) po-lycrystalline Si layers arise from a diamond hexagonal Si phase. Small inclu-sions and bands of this phase were for the first time directly observed by HREM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 183: Symposium E – High Resolution Electron Microscopy of Defects in Materials , 1990 , 67
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Fonash, S.J., Solid State Technology 28 (1), 150 (1985).Google Scholar
[2] Frieser, R.G., Montillo, F.J., Zingermann, N.B., Chu, W.K., and Mader, S.R., J. Electrochem. Soc. 130, 2237 (1983).Google Scholar
[3] Cerva, H., Mohr, E.G., and Oppolzer, H., J.Vac.Sci.Technol. B 5, 590 (1987).Google Scholar
[4] Strunk, H.P., Cerva, H., and Mohr, E.G., Inst. Phys. Conf. Ser. 87, 457 (1987); J. Electrochem. Soc. 135, 2876 (1988).Google Scholar
[5] Jeng, S.J. and Oehrlein, G.S., Appl. Phys. Lett. 50, 1912 (1987).10.1063/1.97684Google Scholar
[6] Cerva, H. and Strunk, H.P., in Proceedings of the Int. Conf. on The Science and Technology of Defect Control in Semiconductors, edited by Sumino, K. (Elsevier Science Publishers, Amsterdam, to be published 1990).Google Scholar
[7] Coyle, G.J. Jr. and Oehrlein, G.S., Appl. Phys. Lett. 47, 604 (1985).Google Scholar
[8] Ponce, F.A., Johnson, N.M., Tramontana, J.C., and Walker, J., Inst. Phys. Conf. Ser. 87, 49 (1987).Google Scholar
[9] Jones, K.S., Prussin, S., and Weber, E.R., Appl. Phys. A 45, 1 (1988).Google Scholar
[10] Küsters, K.H., Mühlhoff, H.M., Enders, G., Mohr, E.G., and Müller, W., in UL-SI Science and Technology/1987, edited by Broydo, S. and Osburn, C.M. (The Electrochemical Society, Pennington, NJ 1987), pp. 640–649.Google Scholar
[11] Cerva, H. and Küsters, K.H., J. Appl. Phys. 66, 4723 (1989).Google Scholar
[12] Coene, W., Bender, H., and Amelinckx, S., Phil. Mag. A 52, 369 (1985).10.1080/01418618508237632Google Scholar
[13] Csepregi, L., Kennedy, E.F., Gallagher, T.J., Mayer, J.W., and Sigmon, T.W., J. Appl. Phys. 48, 4234 (1977).Google Scholar
[14] Horiuchi, M., Tamura, M., and Aoki, S., J. Appl. Phys. 65, 2238 (1989).Google Scholar
[15] Bergholz, W., Mohr, W., Drewes, W., and Wendt, H., Mater. Sci. Engin. B 4, 359 (1989).Google Scholar
[16] Honda, K., Nakanishi, T., Ohsawa, A., and Toyokura, N., Appl. Phys. Lett. 46, 582 (1985); Phys. 62, 1960 (1987); Inst. Phys. Conf. Ser. 87, 463 (1987).10.1063/1.95547Google Scholar
[17] Wendt, H., Cerva, H., Lehmann, V., and Pamler, W., J. Appl. Phys. 65, 2402 (1989).Google Scholar
[18] Cerva, H. and Wendt, H., in Characterization of the Structure and Chemistry of Defects in Materials, edited by Larson, B.C., Rühle, M., Seidmann, D.N. (Mater. Res. Soc. Proc. 138, Pittsburgh, PA 1989) pp. 533–538.Google Scholar
[19] Cerva, H. and Wendt, H., Inst. Phys. Conf. Ser. 100, 587 (1989).Google Scholar
[20] Seibt, M. and Graff, K., J. Appl. Phys. 63, 4444 (1988).Google Scholar
[21] Hendriks, M., Radelaar, S., Beers, A.M., and Bloem, J., Thin Solid Films 113, 59 (1984).10.1016/0040-6090(84)90388-2Google Scholar
[22] Pirouz, P., Chaim, R., and Samuels, J., in Proc. 5th Int. Congr. on The Structure and Properties of Dislocations in Semiconductors, Izvestiya Nauk Akademiya S.S.S.R. 51, 753 (1987) (in Russian).Google Scholar
[23] Pirouz, P., Chaim, R., and Dahmen, U., in Defects in Electronic Materials, edited by Stavola, M., Pearton, S.J., Davies, G. (Mater. Res. Soc. Proc. 104, Pittsburgh, PA 1988) pp. 133–138.Google Scholar
[24] Cerva, H. and Oppolzer, H., in Polycrystalline Semiconductors, edited by Müller, H.J., Strunk, H.P., Werner, J.H. (Springer Verlag, Berlin-New York, 1989) Proceedings in Physics 35, pp. 354–365.Google Scholar
[25] Dahmen, U., Hetherington, C.J., Pirouz, P., and Westmacott, K.H., Scripta Met. 23, 269 (1989).Google Scholar
[26] Guckel, H., Randazzo, T., and Burns, D.W., J. Appl. Phys. 57, 1671 (1985).Google Scholar
[27] Koleshko, V.M., Belitsky, V.F., and Kiryushin, I.V., Thin Solid Films 165, 181 (1988).Google Scholar