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High-Rate Deposited Amorphous Silicon Nitride for the Hydrogenated Amorphous Silicon Thin-Film Transistor Structures

Published online by Cambridge University Press:  10 February 2011

Tong Li ,
Chun-Ying Chen ,
Charles T. Malone  and
Jerzy Kanicki
Tong Li
Affiliation:
Dept. of Electrical Engineering and Computer Science Center for Display Technology and Manufacturing The University of Michigan, Ann Arbor, MI 48109
Chun-Ying Chen
Affiliation:
Dept. of Electrical Engineering and Computer Science Center for Display Technology and Manufacturing The University of Michigan, Ann Arbor, MI 48109
Charles T. Malone
Affiliation:
Optical Imaging Systems, Inc., Northville, MI 48167
Jerzy Kanicki
Affiliation:
Dept. of Electrical Engineering and Computer Science Center for Display Technology and Manufacturing The University of Michigan, Ann Arbor, MI 48109
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Abstract

Hydrogenated amorphous silicon nitride thin films, prepared in a large area plasma-enhanced chemical vapor (PECVD) deposition system utilizing high-rate deposition technique, have been characterized by various techniques. Experimental data obtained from this study are presented and compared to low-rate deposited PECVD films. Special attention has been devoted during this study to the difference between high- and low-rate deposited samples. The amorphous silicon (a-Si:H) thin-film transistors (TFTs) based on high-rate PECVD materials have been fabricated and characterized. The evaluation of a-Si:H TFTs indicates a good electrical performance which is comparable to its low-rate PECVD materials counterparts.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 43
Copyright
Copyright © Materials Research Society 1997

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