Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-25T15:35:21.875Z Has data issue: false hasContentIssue false
  • English
  • Français

High-Rate Deposited Amorphous Silicon Nitride for the Hydrogenated Amorphous Silicon Thin-Film Transistor Structures

Published online by Cambridge University Press:  10 February 2011

Tong Li ,
Chun-Ying Chen ,
Charles T. Malone  and
Jerzy Kanicki
Tong Li
Affiliation:
Dept. of Electrical Engineering and Computer Science Center for Display Technology and Manufacturing The University of Michigan, Ann Arbor, MI 48109
Chun-Ying Chen
Affiliation:
Dept. of Electrical Engineering and Computer Science Center for Display Technology and Manufacturing The University of Michigan, Ann Arbor, MI 48109
Charles T. Malone
Affiliation:
Optical Imaging Systems, Inc., Northville, MI 48167
Jerzy Kanicki
Affiliation:
Dept. of Electrical Engineering and Computer Science Center for Display Technology and Manufacturing The University of Michigan, Ann Arbor, MI 48109
Get access

Abstract

Hydrogenated amorphous silicon nitride thin films, prepared in a large area plasma-enhanced chemical vapor (PECVD) deposition system utilizing high-rate deposition technique, have been characterized by various techniques. Experimental data obtained from this study are presented and compared to low-rate deposited PECVD films. Special attention has been devoted during this study to the difference between high- and low-rate deposited samples. The amorphous silicon (a-Si:H) thin-film transistors (TFTs) based on high-rate PECVD materials have been fabricated and characterized. The evaluation of a-Si:H TFTs indicates a good electrical performance which is comparable to its low-rate PECVD materials counterparts.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 43
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Shah, A., Dutta, J., Wyrsch, N., Prasad, K., Curtins, H., Finger, F., Howling, A., and Hollenstein, Ch., Mat. Res. Soc. Symp. Proc. 258 15 (1992).Google Scholar
2. Finger, F., Kroll, U., Viret, V., and Shah, A., Beyer, W., Tang, X. M., Weber, J., Howling, A., and Hollenstein, Ch., J. Appl. Phys. 71 5665 (1992).Google Scholar
3. Heintze, M., Zedlitz, R., and Bauer, G. H., J. Phys. D: Appl. Phys. 26 1781 (1993).Google Scholar
4. Meiling, H., Westendorp, J. F. M., Hautala, J., Saleh, Z. M., and Malone, C. T., Mat. Res. Soc. Symp. Proc. 345 65 (1994).Google Scholar
5. Sherman, S., Lu, P. Y., Gottscho, R. A., and Wagner, S., Mat. Res. Soc. Symp. Proc. 377 749 (1995).Google Scholar
6. Fuhs, W. in Amorphous & Microcrystalline Semiconductor Devices Volume II, edited by Kanicki, J., Artech House (1992), p. 1–8.Google Scholar
7. Heavens, O. S., Optical Properties of Thin Solid Films. Butterworths, London, 1955.Google Scholar
8. Kanicki, J., and Wagner, P., Electrochem. Soc. Proc. 87–10 261 (1987).Google Scholar
9. Lanford, W. A., Rand, M. J., J. Appl. Phys. 49 2473 (1978).Google Scholar
10. Li, T., Kanicki, J., Fitzner, M., and Warren, W. L., AMLCDs '95, 123, Lehigh (1995).Google Scholar
11. Bustarret, E., Bensouda, M., Habrard, M. C., Bruyere, J. C., Poulin, S., Gujrathi, S. C., Phys. Rev B 38 38 (1988).Google Scholar
12. Chen, C. Y., and Kanicki, J., IEEE Elec. Dev. Lett. (submitted).Google Scholar
13. Kishida, S., Naruke, Y., Uchida, Y., and Matsumura, M., Jpn. J. Appl. Phys. 22 511(1983).Google Scholar