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High-quality hydrogen-diluted a-SiNx:H films deposited by hot-wire chemical vapor deposition

Published online by Cambridge University Press:  21 March 2011

Fengzhen Liu ,
Lynn Gedvilas ,
Brian Keyes ,
Errol Sanchez ,
Shulin Wang  and
Qi Wang
Fengzhen Liu
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA
Lynn Gedvilas
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA
Brian Keyes
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA
Errol Sanchez
Affiliation:
Applied Materials, Inc., 979 E. Argues Ave., Sunnyvale, CA 94086, USA
Shulin Wang
Affiliation:
Applied Materials, Inc., 979 E. Argues Ave., Sunnyvale, CA 94086, USA
Qi Wang
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA
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Abstract

We have studied the effect of H dilution on silicon nitride films deposited by the hot-wire chemical vapor deposition (HWCVD) technique using SiH4, NH3, and H2 gases. We found that H dilution significantly enhances the properties at silicon nitride films. The N content in the film increases by more than 2 times compared to the film without dilution, based on FTIR measurements. As a result, we can achieve high-quality a-SiNx:H films at low substrate temperature using a much lower gas ratio of NH3/SiH4(∼1) compared to a ratio of about 100 for conventional deposition by HWCVD. We also found that dilution decreases the H content in the films. More importantly, diluted SiNx films are conformal. Scanning electron microscopy measurements show a nearly 100% surface coverage over a sharp object. Electric breakdown measurement shows a well-insulated film with more then a few MV/cm for the breakdown field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A9.23
Copyright
Copyright © Materials Research Society 2004

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References

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