Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-17T15:11:03.402Z Has data issue: false hasContentIssue false
  • English
  • Français

High-Q integrated RF passives and RF-MEMS on silicon

Published online by Cambridge University Press:  01 February 2011

Joost T.M. van Beek ,
Marc H.W.M. van Delden ,
Auke van Dijken ,
Patrick van Eerd ,
Andre B.M. Jansman ,
Anton L.A.M. Kemmeren ,
Theo G.S.M. Rijks ,
Peter G. Steeneken ,
Jaap den Toonder  and
Mathieu J.E. Ulenaers
...Show all authors
Joost T.M. van Beek
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Marc H.W.M. van Delden
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Auke van Dijken
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Patrick van Eerd
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Andre B.M. Jansman
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Anton L.A.M. Kemmeren
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Theo G.S.M. Rijks
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Peter G. Steeneken
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Jaap den Toonder
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Mathieu J.E. Ulenaers
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Arnold den Dekker
Affiliation:
Philips Semiconductors, Gerstweg 2, 6534 AE Nijmegen, The Netherlands
Pieter Lok
Affiliation:
Philips Semiconductors, Gerstweg 2, 6534 AE Nijmegen, The Netherlands
Nick Pulsford
Affiliation:
Philips Semiconductors, Gerstweg 2, 6534 AE Nijmegen, The Netherlands
Freek van Straten
Affiliation:
Philips Semiconductors, Gerstweg 2, 6534 AE Nijmegen, The Netherlands
Lenhard van Teeffelen
Affiliation:
Philips Semiconductors, Gerstweg 2, 6534 AE Nijmegen, The Netherlands
Jeroen de Coster
Affiliation:
Katholieke Universiteit Leuven, Dept. Electrical Engineering ESAT-MICAS, Belgium
Robert Puers
Affiliation:
Katholieke Universiteit Leuven, Dept. Electrical Engineering ESAT-MICAS, Belgium
Get access

Abstract

A technology platform is described for the integration of low-loss inductors, capacitors, and MEMS capacitors on a high-resistivity Si substrate. Using this platform the board space area taken up by e.g. a DCS PA output impedance matching circuit can be reduced by 50%. The losses of passive components that are induced by the semi-conducting Si substrate can effectively be suppressed using a combination of surface amorphisation and the use of poly crystalline Si substrates. A MEM switchable capacitor with a capacitance switching factor of 40 and an actuation voltage of 5V is demonstrated. A continuous tuneable dual-gap capacitor is demonstrated with a tuning ratio of 9 using actuation voltages below 15V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 783: Symposium B – Materials, Intergration, and Packaging Issues for High-Frequency Devices , 2003 , B3.1
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Pulsford, N., RF Design magazine, Nov. 2002, p. 40 Google Scholar
[2] Tilmans, H., de Raedt, W., Beyne, E., Proc. MME 2002, Oct. 6–8, 2002 Sinaia, Romania Google Scholar
[3] Rijks, Th., van Beek, J.T.M., Ulenaers, M.J.E., de Coster, J., den Dekker, A., van Teeffelen, L., Proc. ESSCIRC 2003, Estoril, Portugal Sept. 16–18 2003, p. 269 Google Scholar
[4] Barker, N., Rebeiz, M., IEEE Trans. Microwave Theory, V46, No.11, 1998 Google Scholar
[5] van Beek, J.T.M., van Delden, M.H.W.M., Jansman, A.B.M., Boogaard, A., Kemmeren, A. A.L.A.M., Pulsford, N., den Dekker, A., Proc. IMAPS2001, Baltimore, USA, 9–11 Oct. 2001, pp. 467–470.Google Scholar
[6] Jansman, A.B.M., van Beek, J.T.M., van Delden, M.H.W.M., Kemmeren, A.L.A.M. and den Dekker, A., Proc. ESSDERC 2003, Estoril, Portugal Sept. 16–18, 2003 Google Scholar
[7] van Beek, J.T.M., van Delden, M.H.W.M., van Dijken, A., van Eerd, P., van Grootel, M., Jansman, A.B.M., Kemmeren, A.L.A.M., Rijks, Th. G.S.M., Steeneken, P.G., den Toonder, J., Ulenaers, M., den Dekker, A., Lok, P., Pulsford, N., van Straten, F., van Teeffelen, L., De Coster, J., Puers, R., Proc. BCTM 2003, Toulouse, France 28–30 Sept. 2003, pp. 147–150 Google Scholar
[8] Wolf, S., “Silicon Processing”, Lattice Press, p. 5 Google Scholar
[9] Nix, W., Metallurgical Transactions A, V20A, pp. 1989–2217 Google Scholar
[10] Zou, J., Liu, C., Schutt-Aine, J., Chen, J.H., Kang, S.M., proc. IEDM 2000, p. 403.Google Scholar
[11] Nieminnen, H., Ryhanen, T., Ermolov, V., Silanto, S., US patent no.6557413B2Google Scholar
[12] De Coster, J.; Puers, R., Tilmans, H.A.C., van Beek, J.T.M., and Rijks, Th. G.S.M., TRANSDUCERS, 12th Int. Conf. on Solid-State Sensors, Actuators and Microsystems, 2003, Vol. 2, pp. 1784.Google Scholar
[13] Rijks, Th. G.S.M., van Beek, J.T.M., Steeneken, P.G., Ulenaers, M.J.E., De Coster, J., Puers, R., proc. MEMS 2004, Maastricht, Netherlands Jan. 25–29, 2004, to be publishedGoogle Scholar