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Highly (111) Oriented Al Thin Films by Ion-Plating Method Using Discharge Plasma

Published online by Cambridge University Press:  17 March 2011

Shin Masui ,
Kimio Kinoshita ,
Susumu Sakuragi ,
Toshio Kudo  and
Shinji Takayama
Shin Masui
Affiliation:
Sumitomo Heavy Industries, Ltd.63-30 Yuuhigaoka, Hiratsuka, Kanagawa 254-0806, Japan
Kimio Kinoshita
Affiliation:
Sumitomo Heavy Industries, Ltd.63-30 Yuuhigaoka, Hiratsuka, Kanagawa 254-0806, Japan
Susumu Sakuragi
Affiliation:
Sumitomo Heavy Industries, Ltd.63-30 Yuuhigaoka, Hiratsuka, Kanagawa 254-0806, Japan
Toshio Kudo
Affiliation:
Sumitomo Heavy Industries, Ltd.63-30 Yuuhigaoka, Hiratsuka, Kanagawa 254-0806, Japan
Shinji Takayama
Affiliation:
Dept. of Systems and Control Engineering, Hosei University, 3-7-2 Kajinocho, Koganei, Tokyo 184-8584, Japan
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Abstract

Application to aluminum deposition using ion-plating method is described. This method has several superior features for generating highly (111) orientation. The origin of this orientation and surface roughness are discussed in connection with a kinetic energy of the ions. The film properties thus made were compared with those of a conventional sputtered film. The higher (111) oriented film showed high resistance against hillock formation even after annealing at high temperatures. An effect of a plasma cleaning of substrate surface was confirmed to be quite helpful for promotion of (111) preferred orientation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 714: Symposium – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics II , 2001 , L8.6.1
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Thornton, J. A., J. Vac. Sci. Technol. A4(6), 3059 (1986).Google Scholar
2. Vaidya, S. and Sinha, A. K., Thin Solid Films 75, 253 (1981).Google Scholar
3. Shibata, H., Murota, M. and Hashimoto, K., Jpn. J. Appl. Phys. 32, 4479 (1993).Google Scholar
4. Kageyama, M., Abe, K., Y. Harada and Onoda, H., Mat. Res. Soc. Symp. Proc. 514, 91 (1998).Google Scholar
5. Uramoto, J., J. Vac. Soc. Jpn. 25, 660 (1982) (in Japanese).Google Scholar
6. Tanaka, M., U.S. Patent, No.5667012 (1997).Google Scholar
7. Levenson, L. L., Swartzlander, A. B., Usui, H., Yamada, I. and Takagi, T., Mat. Res. Soc. Symp. Proc. 128, 131 (1989).Google Scholar
8. Sakai, S., Ogata, K. and Andoh, Y., Proc. BEAMS 1990, Tokyo, 135 (1990) (in Japanese).Google Scholar