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Highly (111) Oriented Al Thin Films by Ion-Plating Method Using Discharge Plasma

Published online by Cambridge University Press:  17 March 2011

Shin Masui ,
Kimio Kinoshita ,
Susumu Sakuragi ,
Toshio Kudo  and
Shinji Takayama
Shin Masui
Affiliation:
Sumitomo Heavy Industries, Ltd.63-30 Yuuhigaoka, Hiratsuka, Kanagawa 254-0806, Japan
Kimio Kinoshita
Affiliation:
Sumitomo Heavy Industries, Ltd.63-30 Yuuhigaoka, Hiratsuka, Kanagawa 254-0806, Japan
Susumu Sakuragi
Affiliation:
Sumitomo Heavy Industries, Ltd.63-30 Yuuhigaoka, Hiratsuka, Kanagawa 254-0806, Japan
Toshio Kudo
Affiliation:
Sumitomo Heavy Industries, Ltd.63-30 Yuuhigaoka, Hiratsuka, Kanagawa 254-0806, Japan
Shinji Takayama
Affiliation:
Dept. of Systems and Control Engineering, Hosei University, 3-7-2 Kajinocho, Koganei, Tokyo 184-8584, Japan
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Abstract

Application to aluminum deposition using ion-plating method is described. This method has several superior features for generating highly (111) orientation. The origin of this orientation and surface roughness are discussed in connection with a kinetic energy of the ions. The film properties thus made were compared with those of a conventional sputtered film. The higher (111) oriented film showed high resistance against hillock formation even after annealing at high temperatures. An effect of a plasma cleaning of substrate surface was confirmed to be quite helpful for promotion of (111) preferred orientation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 714: Symposium – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics II , 2001 , L8.6.1
Copyright
Copyright © Materials Research Society 2001

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References

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