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High Density Magnetically Confined Dry Etching of Metallization and Dielectrics in Gaas Device Technology

Published online by Cambridge University Press:  25 February 2011

S. J. Pearton ,
C. R. Abernathy ,
F. Ren ,
J. R. Lothian ,
R. F. Kopf  and
A. Katz
S. J. Pearton
Affiliation:
University of Florida, Gainesville, FL 32611 AT&T Bell Laboratories, Murray Hill, NJ 07974
C. R. Abernathy
Affiliation:
University of Florida, Gainesville, FL 32611 AT&T Bell Laboratories, Murray Hill, NJ 07974
F. Ren
Affiliation:
University of Florida, Gainesville, FL 32611
J. R. Lothian
Affiliation:
University of Florida, Gainesville, FL 32611
R. F. Kopf
Affiliation:
University of Florida, Gainesville, FL 32611
A. Katz
Affiliation:
University of Florida, Gainesville, FL 32611
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Abstract

Dry etching of common masking materials used in GaAs device technology was examined down to temperatures of −30°C. The etch rates of SiNx, SiO2 and W in SF6/Ar are reduced below 0°C, but the anisotropy of the etching is improved at low temperature. Microwave enhancement of the SF6/Ar discharges produces increases in etch rates of several times at 25°C, but much lower increases at −30°C substrate temperature. The underlying GaAs surface shows increased S and F coverage after low temperature etching, but these species are readily removed either by an ex-situ wet chemical cleaning step or an in-situ H2 plasma exposure. Photoresist etching is less sensitive to temperature and anisotropic profiles are produced between −30 and + 60°C in pure 02 discharges.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 749
Copyright
Copyright © Materials Research Society 1994

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References

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