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HfO2-based Thin Films Deposited by RF Magnetron Sputtering

Published online by Cambridge University Press:  31 January 2011

Larysa Khomenkova ,
Christian Dufour ,
Pierre-Eugène Coulon ,
Caroline Bonafos  and
Fabrice Gourbilleau
Larysa Khomenkova
Affiliation:
[email protected], CIMAP, UMR CNRS 6252, ENSICAEN, Caen, France
Christian Dufour
Affiliation:
[email protected], CIMAP, UMR CNRS 6252, ENSICAEN, Caen, France
Pierre-Eugène Coulon
Affiliation:
[email protected], CEMES/CNRS, Toulouse, France
Caroline Bonafos
Affiliation:
[email protected], CEMES/CNRS, Toulouse, France
Fabrice Gourbilleau
Affiliation:
[email protected], CIMAP, 6, Blvd Maréchal Juin, Caen, 14050, France
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Abstract

HfO2-based layers prepared by RF magnetron sputtering were studied by X-ray diffraction, infrared absorption spectroscopy and transmission electron microscopy techniques. The effect of the deposition parameters and post-deposition annealing treatment on the properties of the layers was investigated. The amorphous-crystalline transformation of pure HfO2 layers is observed to be stimulated by annealing treatment at 800 ° C. It was found that the incorporation of silicon in HfO2 matrix allows to prevent crystallization of the layers and to shift the crystallization temperature to values up to 900 °C.

Keywords

sputteringx-ray diffraction (XRD)transmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1160: Symposium H – Materials and Physics for Nonvolatile Memories , 2009 , 1160-H05-08
Copyright
Copyright © Materials Research Society 2009

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References

1 Wilk, G. D., Wallace, R. M. and Anthony, J. M., J. Appl. Phys. 89, 5243 (2001).Google Scholar
2 Houssaa, M., Pantisano, L., Ragnarsson, L.-A., Degraeve, R., Schram, T., Pourtois, G., Gendt, S. De, Groeseneken, G. and Heyns, M.M., Mat. Sci. Eng. R 51, 37 (2006).Google Scholar
3 Pant, G., Gnade, A., Kim, M.J., Wallace, R.M., Gnade, B.E.; Quevedo-Lopez, M.A., Kirsch, P.D. and Krishnan, S., Appl. Phys. Lett 89, 032904 (2006).Google Scholar
4 Kim, J.-H., Ignatova, V.A. and Weisheit, M., Microel. Eng. 86, 357 (2009).Google Scholar
5 Dey, S.K., Das, A., Tsai, M., Gu, D., Flyod, M., Carpenter, R.W., Waard, H. De, Werkhoven, C. and Marcus, S., J. Appl. Phys. 95(9) 5042 (2004).Google Scholar
6 Yamamoto, K., Hayashi, S., Kubota, M. and Niwa, M., Appl. Phys. Lett. 81, 2053 (2002).Google Scholar
7 Park, B.K., Park, J., Cho, M., Hwang, C.S., Oh, K., Han, Y. and Yang, D.Y., Appl. Phys. Lett. 80(13), 2368 (2002).Google Scholar
8 He, G., Fang, Q. and Zhang, L.D., Mat.Sci.Semicond.Proc. 9, 870 (2006)Google Scholar
9 Pereira, L., Marques, A., Águas, H., Nedev, N., Georgiev, S., Fortunato, E. and Martins, R., Mat. Sci. Eng. B 109, 89 (2004).Google Scholar
10 Feng, L.-P., Liu, Z.-T. and Sheh, Y.-M., Vacuum 83, 902 (2009)Google Scholar
11 Visokay, M.R., Chambers, J.J., Rotondaro, A.L.P., Shanware, A. and Colombo, L., Appl. Phys. Lett. 80(17), 3183 (2002).Google Scholar
12 Nguyen, N.V., Davydov, A.V., Chandler-Horowitz, D. and Frank, M.F., Appl.Phys.Lett. 87, 192903 (2005).Google Scholar
13 Frank, M.M., Sayan, S., Dörmann, S., Emge, T.J., Wielunski, L.S., Garfunkel, E., and Chabal, Y.J., Mater. Sci. Eng. B 109, 6 (2004).Google Scholar
14 Zhao, X., Vanderbilt, D., Phys. Rev. B 65, 233106 (2002)Google Scholar
15 Cosnier, V., Olivier, M., Theret, G. and Andre, B., J.Vac.Sci.Technol. A 19, 2267 (2001).Google Scholar
16 Lui, M., Zhu, L.Q., He, G., wang, Z.M., Wu, J.X., Zhang, J.-Y., Liaw, I., Fang, Q. and Boyd, I.W., Appl. Surf. Sci. 253, 7869 (2007).Google Scholar