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Growth of Large Diameter 6H SI and 4H n+ SiC Single Crystals

Published online by Cambridge University Press:  01 February 2011

Avinash Gupta ,
Ping Wu ,
Varatharajan Rengarajan ,
Xueping Xu ,
Murugesu Yoganathan ,
Cristopher Martin ,
Ejiro Emorhokpor ,
Andrew Souzis ,
Ilya Zwieback  and
Thomas Anderson
Avinash Gupta
Affiliation:
[email protected], II-VI Incorporated, WBG, Pine Brook, New Jersey, United States
Ping Wu
Affiliation:
[email protected], II-VI Incorporated, WBG, Pine Brook, New Jersey, United States
Varatharajan Rengarajan
Affiliation:
[email protected], II-VI Incorporated, WBG, Pine Brook, New Jersey, United States
Xueping Xu
Affiliation:
[email protected], II-VI Incorporated, WBG, Pine Brook, New Jersey, United States
Murugesu Yoganathan
Affiliation:
[email protected], II-VI Incorporated, WBG, Pine Brook, New Jersey, United States
Cristopher Martin
Affiliation:
[email protected], II-VI Incorporated, WBG, Pine Brook, New Jersey, United States
Ejiro Emorhokpor
Affiliation:
[email protected], II-VI Incorporated, WBG, Pine Brook, New Jersey, United States
Andrew Souzis
Affiliation:
[email protected], II-VI Incorporated, WBG, Pine Brook, New Jersey, United States
Ilya Zwieback
Affiliation:
[email protected]@optonline.net, II-VI Incorporated, WBG, Pine Brook, New Jersey, United States
Thomas Anderson
Affiliation:
[email protected], II-VI Incorporated, WBG, Pine Brook, New Jersey, United States
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Abstract

SiC single crystals are grown at II-VI by the seeded sublimation technique. The process has been scaled up and optimized to support commercial production of high-quality 100 mm diameter, Semi-Insulating (SI) 6H substrates and 100 mm 4H n+ substrates. The growth process incorporates special elements aimed at achieving uniform sublimation of the source, steady growth rate, uniform doping and reduced presence of background impurities.

Semi-insulating 6H substrates are produced using precise vanadium compensation. Vanadium doping is optimized to yield SI material with very high resistivity and low capacitance.

Crystal quality of the substrates is evaluated using a wide variety of techniques. Specific defects, their interaction and evolution during growth are described with emphasis on micropipes and dislocations. The current quality of the 6H SI and 4H n+ crystals grown at II-VI is summarized.

Keywords

crystal growthdefectsdislocations
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1246: Symposium B – Silicon Carbide 2010-Materials, Processing and Devices , 2010 , 1246-B01-01
Copyright
Copyright © Materials Research Society 2010

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