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Growth of GaN on Thin SI {111} Layers Bonded to SI {100} Substrates

Published online by Cambridge University Press:  10 February 2011

J. G. Fleming  and
Jung Han
J. G. Fleming
Affiliation:
Sandia National Laboratories Albuquerque, NM, 87185, [email protected]
Jung Han
Affiliation:
Sandia National Laboratories Albuquerque, NM, 87185, [email protected]
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Abstract

We have demonstrated the ability to bond thin layers of Si {111} onto either silicon dioxide or silicon nitride coated Si {100}. This was achieved using a “Smart-Cut” process. The integration of SiN required chemical mechanical polishing. The growth of GaN on a thin Si {111} on oxide on Si {100} stack was demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 101
Copyright
Copyright © Materials Research Society 1999

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