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Growth of CoSi2 on CaF2/Si (111) Heterostructures

Published online by Cambridge University Press:  22 February 2011

C. Adamski  and
C. Schäffer
C. Adamski
Affiliation:
Institut für Halbleitertechnologie, Universität Hannover, Appelstr. 11A, D-3000 Hannover, Federal Republic of Germany
C. Schäffer
Affiliation:
Institut für Halbleitertechnologie, Universität Hannover, Appelstr. 11A, D-3000 Hannover, Federal Republic of Germany
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Abstract

In order to produce an epitaxial metal/insulator/semiconductor structure we investigated the growth of CoSi2 on CaF2/Si (111) heterostructures. We demonstrate the possibility to grow epitaxial CoSi2 on CaF2 films by utilization of the template technique. The fabrication of these structures will be presented. The properties of such heterostructures were determined by means of RHEED, LEED, AES, SIMS, RBS and resistivity measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 525
Copyright
Copyright © Materials Research Society 1991

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References

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