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Growth and Properties of W-Si-N Diffusion Barriers Deposited by Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

J. G. Fleming ,
E. Roherty-Osmun  and
J. S. Custer
J. G. Fleming
Affiliation:
Sandia National Laboratories, Org. 1323, MS 1085, P.O. Box 5800, Albuquerque NM 87185.
E. Roherty-Osmun
Affiliation:
Sandia National Laboratories, Org. 1323, MS 1085, P.O. Box 5800, Albuquerque NM 87185.
J. S. Custer
Affiliation:
Sandia National Laboratories, Org. 1323, MS 1085, P.O. Box 5800, Albuquerque NM 87185.
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Abstract

We have used chemical vapor deposition to grow ternary tungsten based diffusion barriers to determine if they exhibit properties similar to those of sputter deposited ternaries. A range of different W-Si-N compositions were produced. The deposition temperature was low, 350°C, and the precursors used are accepted by the industry. Deposition rates are acceptable for a diffusion barrier application. Resistivities range from 350 to 20000 μΩ-cm, depending on composition. Step coverage of films with compositions expected to be of interest for diffusion barrier applications is 100%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 389
Copyright
Copyright © Materials Research Society 1996

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