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The Growth and In-Situ Doping of SiGe/Si Strained Heterostructures by RTP/VLP-CVD

Published online by Cambridge University Press:  22 February 2011

Shulin Gu ,
Youdou Zheng ,
Rong Zhang ,
Ronghua Wang ,
Ping Han ,
Xiaodong Huang ,
Peixing Zhong ,
Liqun Hu ,
Shunmin Zhu  and
J.N. Chen
Shulin Gu
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
Youdou Zheng
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
Rong Zhang
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
Ronghua Wang
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
Ping Han
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
Xiaodong Huang
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
Peixing Zhong
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
Liqun Hu
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
Shunmin Zhu
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
J.N. Chen
Affiliation:
Charles Evans & Associates, Redwood, LA 94063, USA
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Abstract

SiH4 and GeH4 Deposition and In-Situ Doping of SiGe/Si Strained Heterostructures by Rapid Thermal Process Very Low Pressure Chemical Vapor Deposition method have been studied in this paper. Ge incorporation rate increases to a maximum value and then decreases as temperature increases, the growth rate of SiGe alloy reaches its maximum value and then decreases as Ge composition increases. Ge incorporation also enhances Si deposition rate in SiGe alloy. The Boron and Phosphorus doping would change thegrowth rate of SiGe layers and the sharp doping interfaces in SiGe/Si heterostructures have been obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 57
Copyright
Copyright © Materials Research Society 1994

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References

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