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Growth and Characterization of GaN and ALxGA1−xN Thin Films Achieved Via Lateral- and/or Pendeo-Epitaxial Overgrowth on 6H-SIC(0001) Substrates

Published online by Cambridge University Press:  10 February 2011

Robert F. Davis ,
O-H. Nam ,
T. S. Zheleva ,
M. D. Bremser ,
K. J. Linthicum ,
T. Gehrke ,
P. Rajagopal ,
D. B. Thomson  and
E. P. Carlson
Robert F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965
O-H. Nam
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965
T. S. Zheleva
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965
M. D. Bremser
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965
K. J. Linthicum
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965
T. Gehrke
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965
P. Rajagopal
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965
D. B. Thomson
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965
E. P. Carlson
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965
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Abstract

Discrete and coalesced monocrystalline layers of lateral- and pendeo-epitaxially grown GaN and AlxGal−xN layers originating from GaN stripes deposited within windows contained in SiO2 masks or from side walls of GaN seed structures containing SiNx top masks have been grown via organometallic vapor phase deposition on GaN/AlN/6H-SiC(0001) substrates. Multilayer heterostructures of GaN and AlxGal−N were also achieved. Scanning and transmission electron microscopies and atomic force microscopy were used to evaluate the microstructures, the type and distribution of dislocations and the surface roughness of the resulting films. The extent and microstructural characteristics of the laterally overgrown GaN regions were a strong function of stripe orientation and temperature. These regions contained a low density of dislocations. The RMS roughness of the (1120) sidewall plane of the pendeoepitaxial structures was approximately 0.100 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 91
Copyright
Copyright © Materials Research Society 1999

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