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Formation of Ge Nanocrystals in High-k Dielectric Layers for Memory Applications

Published online by Cambridge University Press:  01 February 2011

Panagiotis Dimitrakis ,
Vassilios Ioannou-Sougleridis ,
Pascal Normand ,
Caroline Bonafos ,
Sylvie Schamm ,
A Mouti ,
Bernd Schmidt  and
Jill Becker
Panagiotis Dimitrakis
Affiliation:
[email protected], NCSR Demokritos, Institute of Microelectronics, Ag.Paraskevi, Greece
Vassilios Ioannou-Sougleridis
Affiliation:
[email protected], National Center for Scientific Research DEMOKRITOS, Institute of Microelectronics, Patriarchou Gregoriou and Neapoleos, Aghia Paraskevi, Attika, 153-10, Greece, ++301-210-650 3240, ++301 210 6511 723
Pascal Normand
Affiliation:
[email protected], NCSR, IMEL, Aghia Paraskevi, Greece
Caroline Bonafos
Affiliation:
[email protected], CEMES-CNRS, 29 rue Jeanne Marvig, TOULOUSE, 31400, France, 0562257911, 0562257999
Sylvie Schamm
Affiliation:
[email protected], CEMES-CNRS, 29 rue Jeanne Marvig, TOULOUSE, 31400, France, 0562257911, 0562257999
A Mouti
Affiliation:
[email protected], CEMES-CNRS, 29 rue Jeanne Marvig, TOULOUSE, 31400, France, 0562257911, 0562257999
Bernd Schmidt
Affiliation:
[email protected], Forschungszentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany
Jill Becker
Affiliation:
[email protected], Cambridge Nanotech, Cambridge, Massachusetts, United States
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Abstract

In this paper, the fabrication of Ge-NCs embedded in Al2O3 and HfO2 layers by ion-beam-synthesis for memory applications is investigated. Structural properties of the high-k layers before and after implantation and annealing were studied by TEM observation and EELs analysis. Spherical Ge-NCs 5nm in diameter were observed in Al2O3 implanted layers after furnace annealing at 800°C in nitrogen. Annealing studies in the range 700-1050°C in nitrogen revealed the evolution of the charge storage properties of these structures utilizing MIS capacitors test structures. No NCs were observed in HfO2 implanted layers. However, significant negative-differential-resistance regions were observed in I-V characteristics of the related MIS structures. These may be attributed to the formation of conductive paths made of hafnium germanide (HfGe2) or hafnium germanate (HfGeO) regions.

Keywords

Genanostructurememory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G06-04
Copyright
Copyright © Materials Research Society 2010

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