Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-06T06:59:12.315Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation of Epitaxial NiSi2 and CoSi2 On Laterally Confined (111)Si

Published online by Cambridge University Press:  28 February 2011

C.S. Chang ,
C.W. Nieh  and
L.J. Chen
C.S. Chang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
C.W. Nieh
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
L.J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
Get access

Abstract

Epitaxial NiSi2 of single orientation was grown on laterally confined (111)Si. Striking oxide opening size effects on the growth of NiSi2 epitaxy were observed. The formation temperature of NiSi2 on (111)Si was found to be as low as 550°C inside oxide openings 1.8 μm or smaller in size. Epitaxial NiSi2 of single orientation which is identical to that of (111)Si substrate was formed inside oxide openings of or smaller than 1.8, 1, and 0.8 μm in size in samples annealed at 550-750, 800, and 850-900°C, respectively. Preliminary results on the epitaxial growth of CoSi2 are also reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 485
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Saitoh, S., Ishiwara, H., and Furukawa, S., Appl. Phys. Lett. 37, 223 (1980).Google Scholar
2. Tung, R.T., Phys. Rev. Lett. 52, 461 (1984).Google Scholar
3. Liehr, M., Schmid, P.E., LeGouses, F.K., and Ho, P.S., Phys. Rev. Lett. 54, 2139 (1985).Google Scholar
4. Tung, R.T., Levi, A.F.J., and Gibson, J.M., Appl. Phys. Lett. 48, 635 (1986).Google Scholar
5. Chen, L.J., Cheng, H.C., and Lin, W.T., Mater, Res, Soc. Symp. Proc. 54, 245 (1986).Google Scholar
6. Nicolet, M.A. and Lau, S.S., in Materials and Process Characterization, edited by Einspruch, N.G. and Larrabee, G.B. (Academic, New York, 1983), p. 329.Google Scholar
7. Tu, K.N., Alessandrini, E.I., Chu, W.K., Krautle, H., and Mayer, J.W., Jpn. J. Appl. Phys. 2, Suppl. 2–1, 669 (1974).Google Scholar
8. Chiu, K.C.R., Poate, J.M., Howe, J.E., Sheng, T.T., and Cullis, A.G., Appl. Phys. Lett. 38, 988 (1981).Google Scholar
9. Chen, L.J., Mayer, JW., and Tu, K.N., Thin Solid Films 93, 135 (1982).Google Scholar
10. Tung, R.T., Gibson, J.M., and Poate, J.M., Phys. Rev. Lett. 50, 429 (1983).Google Scholar
11. Tung, R.T., Gibson, J.M., Jacobson, D.C., and Poate, J.M., Appl. Phys. Lett. 43, 476 (1983).Google Scholar
12. Cheng, H.C., Wu, I.C., and Chen, L.J., Appl. Phys. Lett, 50, 174 (1987).Google Scholar
13. Chen, L.J. and Chang, T.T., Thin Solid Films, 104, 183 (1983).Google Scholar
14. Townsend, P. (unpublished work).Google Scholar
15. 'Heurle, F.M. and Gas, P., J. Mater. Res. 1, 205 (1986).Google Scholar
16. Chen, L.J. and Hou, C.Y., Chinese J. Mater. Sci. 15–1, 1 (1983).Google Scholar