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Formation and Characterization of Spe Grown Ultra-Thin Cobalt Disilicide Film

Published online by Cambridge University Press:  10 February 2011

Xin-Ping Qu ,
Guo-Ping Ru ,
Bing-Zong Li ,
C. Detavernier ,
R L. Van Meirhaeghe  and
F. Cardon
Xin-Ping Qu
Affiliation:
Dept. of Electronic Engineering, Fudan University, Shanghai, CHINA [email protected]
C. Detavernier
Affiliation:
Dept. of Solid State Science, University of Gent, Krijgslaan 281/S 1, B-9000, Gent, Belgium.
R L. Van Meirhaeghe
Affiliation:
Dept. of Solid State Science, University of Gent, Krijgslaan 281/S 1, B-9000, Gent, Belgium.
F. Cardon
Affiliation:
Dept. of Solid State Science, University of Gent, Krijgslaan 281/S 1, B-9000, Gent, Belgium.
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Abstract

Ultra-thin epitaxial CoSi2 films formed by Co(3∼5nm)/Ti(1 nm)/Si(100) and Co(3∼5nm)/Si(lnm)/Ti(Inm)/Si are studied. The multilayers are deposited by ion-beam sputtering. Rapid thermal annealing (RTA) is used for silicidation. XRD, RBS, TEM, AFM, four-point probe, I-V and C-V measurements are carried out for characterization. The XRD spectra show the CoSi2 film formed by Co/Ti/Si or Co/Si/Ti/Si solid phase epitaxy has, epitaxial characteristic. XTEM shows that the film is continuous. RBS/Channeling shows that the formed CoSi2 has sharp interface with a minimum channeling yield of Co signal of 40%. AFM shows that the surface of ultra-thin CoSi2 film is smooth with a roughness of nearly 0.7 nm. The Rs∼T relationship shows that the CoSi2 films formed by Co/Si/Ti/Si reaction have the best thermal stability (stable up to 900°C). Those formed by Co/Ti/Si reaction are stable up to 850°C, while those formed by Co/Si reaction are only stable up to 750°C. By fitting the experimental I-V and C-V curves of the epitaxial CoSi2/Si Schottky diodes, barrier heights of around 0.6 eV and close to unity ideality factors are obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 157
Copyright
Copyright © Materials Research Society 1999

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References

1. Vojak, B.A., Alley, G.A., IEEE Electron device, ED–30, 877(1983).10.1109/T-ED.1983.21230Google Scholar
2. Z.G Xiao, Rozgonyi, G.A., Canovai, C.A., Osburn, C.M., J. Mater. Res. 7, 269(1992).Google Scholar
3. Maszara, W.P., Appl. Phys. Lett. 62, 961(1993).10.1063/1.108533Google Scholar
4. Tung, R.T., Mater. Chem. Phys. 32, 107(1993).10.1016/0254-0584(92)90268-DGoogle Scholar
5. A.E White, Short, K.T., Dynes, R.C., Garno, J.P., Gibson, J.M., Appl. Phys. Lett. 50, 95 (1987).Google Scholar
6. Tung, R.T., Appl. Surf. Sci. 117/118, 268(1997).10.1016/S0169-4332(97)80092-XGoogle Scholar
7. Tung, R.T., Schrey, F., MRS Symp. Proc. 402, 173(1996).10.1557/PROC-402-173Google Scholar
8. Dass, M.L.A., Fraser, D.B., Wei, C.-S., Appl. Phys. Lett. 58, 1308(1991).10.1063/1.104345Google Scholar
9. Liu, P., Li, B.-Z., Sun, Z. Gu, Z.G., Huang, W.N., Zhou, Z.Z., Ni, R.S., Lin, C.L, Zhou, S.C., Hong, F., Rozgonyi, G.A., J. Appl. Phys. 74, 1700(1993).10.1063/1.354824Google Scholar
10. Lawers, A., Kyllesbech, K. Larsen, Van Hove, M., Verbeeck, R., Maex, K., Von Rossum, M., J. Appl. Phys. 77, 2525(1995).10.1063/1.358782Google Scholar
11. Hatzikonstantindou, S., Wikman, P., Zhang, S.L., Petersson, C. Sture, J. Appl. Phys. 80, 252 (1996).10.1063/1.362907Google Scholar
12. Cardenas, J., Zhang, S.L., Svensson, B.G., Petersson, C.S., J. Appl. Phys. 80, 762(1996).10.1063/1.362884Google Scholar