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Epitaxial Growth Of Nickel and Cobalt Germanides On Germanium

Published online by Cambridge University Press:  28 February 2011

Y.F. Hsieh ,
L.J. Chen ,
E.D. Marshall  and
S.S. Lau
Y.F. Hsieh
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
L.J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
E.D. Marshall
Affiliation:
Department of Electrical Engineering and Computer Science, University of California, San Diego, La Jolla, CA 92093
S.S. Lau
Affiliation:
Department of Electrical Engineering and Computer Science, University of California, San Diego, La Jolla, CA 92093
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Abstract

Transmission and scanning electron microscopy, Rutherford backscattering-channeling and Read camera glancing angle x-ray diffraction techniques have been applied to study the epitaxial growth of nickel and cobalt germanides on germanium.

NiGe, Co5Ge7 and CoGe2 were found to grow epitaxially on both (001) and (111)Ge. More extensive epitaxy on (111)Ge is correlated with better lattice matches at the germanide/Ge interfaces than those on (001)Ge for these epitaxial germanides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 467
Copyright
Copyright © Materials Research Society 1987

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References

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