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Enhanced Forward Bias Operation of 4H-SiC PiN Diodes Using High Temperature Oxidation

Published online by Cambridge University Press:  18 July 2014

Craig A. Fisher ,
Michael R. Jennings ,
Yogesh K. Sharma ,
Dean P. Hamilton ,
Stephen M. Thomas ,
Fan Li ,
Peter M. Gammon ,
Amador Pérez-Tomás ,
Susan E. Burrows  and
Philip A. Mawby
Craig A. Fisher
Affiliation:
School of Engineering, University of Warwick, Coventry, CV4 7AL, UK.
Michael R. Jennings
Affiliation:
School of Engineering, University of Warwick, Coventry, CV4 7AL, UK.
Yogesh K. Sharma
Affiliation:
School of Engineering, University of Warwick, Coventry, CV4 7AL, UK.
Dean P. Hamilton
Affiliation:
School of Engineering, University of Warwick, Coventry, CV4 7AL, UK.
Stephen M. Thomas
Affiliation:
School of Engineering, University of Warwick, Coventry, CV4 7AL, UK.
Fan Li
Affiliation:
School of Engineering, University of Warwick, Coventry, CV4 7AL, UK.
Peter M. Gammon
Affiliation:
School of Engineering, University of Warwick, Coventry, CV4 7AL, UK.
Amador Pérez-Tomás
Affiliation:
Institut Català De Nanociència i Nanotecnologia, 08193, Bellaterra, Barcelona, Spain.
Susan E. Burrows
Affiliation:
Department of Physics, University of Warwick, Coventry, CV4 7AL, UK.
Philip A. Mawby
Affiliation:
School of Engineering, University of Warwick, Coventry, CV4 7AL, UK.
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Abstract

In this paper, high temperature (>1400°C) thermal oxidation has been applied, for the first time, to 4H-SiC PiN diodes with thick (110 μm) drift regions, for the purpose of increasing the carrier lifetime in the semiconductor. PiN diodes were fabricated using 4H-SiC material that had undergone thermal oxidation performed at 1400°C, 1500°C and 1600°C, then were electrically characterized. Forward current-voltage (I-V) measurements showed that thermally oxidized PiN diodes exhibited considerably improved electrical characteristics, with devices oxidized at 1500°C having a forward voltage drop (VF) of 4.15 V and a differential on-resistance (Ron,diff) of 8.9 mΩ-cm2 at 100 A/cm2 and 25°C. Compared to typical control sample PiN diode characteristics, this equated to an improvement of 8% and 23% for VF and Ron,diff, respectively. From analysis of the reverse recovery characteristics, the carrier lifetime of the PiN diodes oxidized at 1500°C was found to be 1.05 μs, which was an improvement of around 30% compared to the control sample PiN diodes.

Keywords

devicesoxidationelectrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1693: Symposium DD – Silicon Carbide‒Materials, Processing and Devices , 2014 , mrss14-1693-dd06-17
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Chow, T. P., Mater. Sci. Forum. 778–780, 1077–1082 (2014).CrossRefGoogle Scholar
Sharma, Y. K., Ahyi, A. C., Issacs-Smith, T., Modic, A., Park, M., Xu, Y., Garfunkel, E. L., Dhar, S., Feldman, L. C. and Williams, J. R., IEEE Electron Device Lett. 34(2), 175–177 (2013).CrossRefGoogle Scholar
Kimoto, T., Danno, K. and Suda, J., Phys. Stat. Sol. (B). 245(7), 1327–1336 (2008).CrossRefGoogle Scholar
Hiyoshi, T. and Kimoto, T., Appl. Phys. Expr. 2, 041101 (2009).CrossRefGoogle Scholar
Klein, P. B., Mater. Sci. Forum. 717–720, 279–284 (2012).CrossRefGoogle Scholar
Storasta, L. and Tsuchida, H., Appl. Phys. Lett. 90, 062116 (2007).CrossRefGoogle Scholar
Kawahara, K., Suda, J. and Kimoto, T., J. Appl. Phys. 111, 053710 (2012).CrossRefGoogle Scholar
Kawahara, K., Suda, J. and Kimoto, T., Mater. Sci. Forum. 717–720, 241–246 (2012).CrossRefGoogle Scholar
Thomas, S. M., Jennings, M. R., Sharma, Y. K., Fisher, C. A. and Mawby, P. A., Mater. Sci. Forum. 778–780, 599–602 (2014).CrossRefGoogle Scholar
Nakayama, K., Tanaka, A., Nishimura, M., Asano, K., Miyazawa, T., Ito, M. and Tsuchida, H., IEEE Trans. Electron Devices. 59(4), 895–901 (2012).CrossRefGoogle Scholar
Jennings, M. R., Fisher, C. A., Walker, D.. Sanchez, A., Pérez-Tomás, A., Hamilton, D. P., Gammon, P. M., Burrows, S. E., Thomas, S. M., Sharma, Y., Li, F. and Mawby, P. A., Mater. Sci. Forum. 778–780, 693–696 (2014).CrossRefGoogle Scholar
Fisher, C. A., Jennings, M. R., Bryant, A. T., Pérez-Tomás, A., Gammon, P. M., Brosselard, P., Godignon, P. and Mawby, P. A., Mater. Sci. Forum. 717–720, 993–996 (2012).CrossRefGoogle Scholar
Cheng, L., Agarwal, A. K., O’Loughin, M., Capell, C., Lam, K., Jonas, C., Richmond, J., Burk, A., Palmour, J. W., Ogunniyi, A. A., O’Brien, H. K. and Scozzie, C. J., Mater. Sci. Forum. 740–742, 895–898 (2013).CrossRefGoogle Scholar
Salemi, A., Buono, B., Hallén, A., Hassan, J. U., Bergman, P., Zetterling, C. M. and Östling, M., Mater. Sci. Forum. 778–780, 836–840 (2014).CrossRefGoogle Scholar
Zippelius, B., Suda, J. and Kimoto, T., Mater. Sci. Forum. 717–720, 247–250 (2012).CrossRefGoogle Scholar