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Electronic Deep Levels in Laser – Crystallized Silicon Thin-Film MOS Capacitors on Fused Silica

Published online by Cambridge University Press:  21 February 2011

N. M. Johnson  and
M. D. Moyer
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
M. D. Moyer
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

Residual electronic deep levels in fully – processed, cw laser – crystallized silicon thin films on fused silica were measured by transient capacitance spectroscopy, supplemented with capacitance – voltage techniques. The test devices were metal – oxide – silicon thin – film capacitors with p – type conductivity. The hole emission spectra are dominated by a continuous distribution of deep levels in the lower half of the silicon band gap which are associated with the Si – SiO2 interface; the spectra also display the effects of surface generation. The interface – state density near midgap is estimated to be 6×1010 eV−1 cm−2, and there are no detectable bulk deep levels with densities > 1×1014 cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 101
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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