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Electron Spin Resonance Studies of Donors in Bulk and thin Film β3-SiC

Published online by Cambridge University Press:  21 February 2011

W. E. Carlos ,
J. A. Freitas Jr ,
J. C. Pazik ,
L. M. Ivanova ,
YU.M. Altaiskit  and
V. L. Zuev
W. E. Carlos
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
J. A. Freitas Jr
Affiliation:
Sachs Freeman Associates, Landover, MD 20785
J. C. Pazik
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375 Current address; Office of Naval Research, Arlington, VA 22217
L. M. Ivanova
Affiliation:
A.A. Baikov Institute of Metallurgy, Russian Academy of Sciences, Moscow, Russia
YU.M. Altaiskit
Affiliation:
Kiev Polytechnic Institute, Kiev, Ukraine.
V. L. Zuev
Affiliation:
Kiev Polytechnic Institute, Kiev, Ukraine.
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Abstract

We have investigated the electron spin resonance of donors in bulk and thin film β-SiC at T = 10K to 40K. In both, two donor spectra are resolved; a three line spectrum associated with nitrogen on the carbon site and a broader line of unidentified origin. The observable hyperfine splitting decreases with increasing temperature due to a small valley-orbit splitting, in qualitative agreement with photoluminescence results. The lineshape has a significant lorentzian character even at the lowest temperatures, indicating exchange interactions with residual conduction electrons, possibly from a shallower donor. We find a lower concentration of both donors in the bulk material and a different temperature dependence of the lineshape for the two samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 535
Copyright
Copyright © Materials Research Society 1994

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References

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