Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-23T17:03:49.475Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Properties of CuTCNQ Based Organic Memories Targeting Integration in the CMOS Back End-of-Line

Published online by Cambridge University Press:  01 February 2011

Robert Mueller ,
Joris Billen ,
Rik Naulaerts ,
Olivier Rouault ,
Ludovic Goux ,
Dirk J Wouters ,
Jan Genoe  and
Paul Heremans
Robert Mueller
Affiliation:
[email protected], IMEC vzw., SOLO / PME, Kapeldreef 75, Leuven, 3001, Belgium, ++32/16 28 19 08, ++32/16 28 10 97
Joris Billen
Affiliation:
[email protected], IMEC vzw., Kapeldreef 75, Leuven, 3001, Belgium
Rik Naulaerts
Affiliation:
[email protected], IMEC vzw., Kapeldreef 75, Leuven, 3001, Belgium
Olivier Rouault
Affiliation:
[email protected], IMEC vzw., Kapeldreef 75, Leuven, 3001, Belgium
Ludovic Goux
Affiliation:
[email protected], IMEC vzw., Kapeldreef 75, Leuven, 3001, Belgium
Dirk J Wouters
Affiliation:
[email protected], IMEC vzw., Kapeldreef 75, Leuven, 3001, Belgium
Jan Genoe
Affiliation:
[email protected], IMEC vzw., Kapeldreef 75, Leuven, 3001, Belgium
Paul Heremans
Affiliation:
[email protected], IMEC vzw., Kapeldreef 75, Leuven, 3001, Belgium
Get access

Abstract

CuTCNQ (TCNQ=7,7,8,8-tetracyanoquinodimethane) is a resistive switching charge-transfer complex which can be used for organic nonvolatile memories. In this contribution we report on a thorough investigation of the electrical switching of CuTCNQ memories. Our memories currently achieve an endurance of up to 10000 write/erase cycles with a clear distinction between ON and OFF reading currents. ON and OFF threshold voltages follow a Gaussian distribution. Temperature dependent measurements of CuTCNQ based organic memories show a semiconductor like behavior for the ON state. The retention time of the ON state exceeded 60 hours at room temperature. Electrical switching of CuTCNQ memories in air was virtually not affected by temperatures up to 80°C, but becomes erratic at 120°C. The CuTCNQ material itself already starts to decompose around 200°C in presence of oxygen as shown by thermogravimetric analysis.

Keywords

memorymetal-insulator transitionorganometallic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I01-10
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Baek, I.G., Lee, M.S., Seo, S., Lee, M.J., Seo, D.H., Suh, D.S., Park, J.C., Park, S.O., Kim, H.S., Yoo, I.K., Ching, U.I., and Moon, J.T., Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International pp. 587 – 590 (2004).Google Scholar
2. Ahn, S.J., Song, Y.J., Jeong, C.W., Shin, J.M., Fai, Y., Hwang, Y.N., Lee, S.H., Ryoo, K.C., Lee, S.Y., Park, J.H., Horii, H., Ha, Y.H., Yi, J.H., Kuh, B.H., Koh, G.H., Jeong, G.T., Jeong, H.S., Kim, K., and Ryu, B.I., Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International pp. 907–910 (2004).Google Scholar
3. Kozicki, M.N., Park, M., and Mitkova, M., IEEE Trans. Nanotechnol. 4, 331 (2005).Google Scholar
4. Potember, R.S., Poehler, T.O., and Cowan, D.O., Appl. Phys. Lett. 34, 405 (1979).Google Scholar
5. Heintz, R.A., Zhao, H., Ouyang, X., Grandinetti, G., Cowen, J., Dunbar, K.R., Inorg. Chem. 38, 144 (1999).Google Scholar
6. Müller, R., Jonge, S. De, Myny, K., Wouters, D.J., Genoe, J., and Heremans, P., Solid-State Electronics 50, (2006).Google Scholar
7. Müller, R., Jonge, S. De, Myny, K., Wouters, D.J., Genoe, J., and Heremans, P., MRS Spring Meeting 2006, San Francisco (USA).Google Scholar
8. Müller, R., Jonge, S. De, Myny, K., Wouters, D.J., Genoe, J., and Heremans, P., Appl Phys Lett. 89, 223501 (2006).Google Scholar
9. Müller, R., Genoe, J., and Heremans, P., 1st International Conference on Memory Technology and Design (ICMTD), May 21-25, 2005, proceedings pp 181–183.Google Scholar
10. Joo, W.-J., Choi, T.-L., Lee, J., Lee, S. K., Jung, M.-S., Kim, N., and Kim, J. M., J. Phys. Chem. B 110, 23812 (2006).Google Scholar
11. Kever, T., Nauenheim, C., Böttger, U., and Waser, R., Thin Solid Films 515, 1893 (2006).Google Scholar