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Electrical Characterization of Laser/Energy-Beam Recrystallized Thin Film Silicon-On-Insulator (SOI)

Published online by Cambridge University Press:  21 February 2011

El-Hang Lee  and
D. J. Ruprecht
El-Hang Lee
Affiliation:
Monsanto Electronic Materials Company, P.O. Box 8, St. Peters, MO 63376
D. J. Ruprecht
Affiliation:
Monsanto Electronic Materials Company, P.O. Box 8, St. Peters, MO 63376
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Abstract

Spreading resistance has been measured for various types of grain boundaries formed on graphite heater recrystallized SOI samples (G-SOI) or laser strip beam-recrystallized SOI samples (L-SOI) in order to identify the characteristic relation between the morphological/structural variation of the boundary defects and their electrical transport properties. In general, the resistance values across L-SOI sub-boundaries are higher than those across G-SOI sub-boundaries. TEM analyses reveal evidences of higher degree of crystallographic mismatch (up to 10°) in L-SOI sub-boundaries than that (1 – 2°) in G-SOI sub-boundaries. The measurement also revealed the evidences of counter-doping near the seed areas where the epitaxial growth initiated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 139
Copyright
Copyright © Materials Research Society 1984

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References

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