Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-09T08:31:56.425Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical and Physical Characterization of Tin Diffusion Barrier for Sub-Micron Contact Structure

Published online by Cambridge University Press:  21 February 2011

G.D. Yao ,
Y.C. Lu ,
S. Prasad ,
W. Hata ,
F.S. Chen  and
H. Zhang
G.D. Yao
Affiliation:
LSI Logic Co., 1601 McCarthy Blvd, Milpitas, CA 95035
Y.C. Lu
Affiliation:
LSI Logic Co., 1601 McCarthy Blvd, Milpitas, CA 95035
S. Prasad
Affiliation:
LSI Logic Co., 1601 McCarthy Blvd, Milpitas, CA 95035
W. Hata
Affiliation:
LSI Logic Co., 1601 McCarthy Blvd, Milpitas, CA 95035
F.S. Chen
Affiliation:
LSI Logic Co., 1601 McCarthy Blvd, Milpitas, CA 95035
H. Zhang
Affiliation:
Dept. of Mat. Sci. & Eng., Northwest Univ., Evanston, IL 60208
Get access

Abstract

TiN diffusion barriers have been widely used in submicron contact structures, due to its good adhesion (to SiO2, W, Al and Si) properties, low diffusivity (for Si, W and Al) and compatibility with TiSi2 processing. The purpose of this paper is to present the results of physical and electrical characterization of contact structures with a TiN barrier and W plugs. Two different barrier metal processes were compared, Viz: sputtered Ti followed by post RTN and Ti/TiN films followed by post RTA in the range of 600° to 800°C. The devices were thermal stressed at 450°C for 7 hrs after W plug formation and Al metallization. Ti/TiN films with post RTA are generally superior barrier layers than Ti films with post RTA as shown by electrical characterization of contact resistance and barrier integrity. The relationship between electrical properties and microstructure for the two different barrier structures is discussed. W/TiN and TiN/TiSi2 interface structures were characterized using high resolution TEM. TiSi2 was found to be epitaxially grown during RTA, under certain process conditions. The crystal structure of TiSi2 was determined from electron diffraction patterns.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 103
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Dixit, G.A., Chen, F.S., Zhang, H., Yao, G.D., Wei, C.C. and Liou, F.T., MRS Symposium Proceeding edited by Katz, A., Nissin, Y.I. and Harder, J., vol 260, 833 (1992).Google Scholar
2. Ahn, K.Y., Wittmer, M. and Ting, C.Y., Thin Solid Films, 107, 45 (1983).Google Scholar
3. Chen, F.S. et al. accepted to be published in 1992 Proceedings of 10th International IEEE VLSI Multilevel Interconnection Conference.Google Scholar
4. Klepeis, S.J., Bendict, J.P. and Anderson, R.M., MRS Symposium Proceeding edited by Brarman, J.C., Anderson, R.M. and McDonald, M.L., vol 115, 179 (1987)Google Scholar