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Effects of SC-1 Dilution and Temperature Variations on Etch Rate and Surface Haze

Published online by Cambridge University Press:  15 February 2011

K. K. Christenson  and
S. M. Smith
K. K. Christenson
Affiliation:
FSI International, Inc., Surface Conditioning Division, Chaska, Minnesota
S. M. Smith
Affiliation:
FSI International, Inc., Surface Conditioning Division, Chaska, Minnesota
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Abstract

The slight etch and accompanying roughening of the silicon by the APM solution are of great concern as device geometrys and gate oxide thicknesses decrease. This report covers the variations in the SiO2 etch rate and surface roughening of an APM solution as a function of NH4OH and H2O2 concentration and temperature. In general, the etch rate and roughening increased with increasing temperature and NH4OH concentration but was unaffected by H2O2 concentration. Other portions of the larger APM study covering the addition and removal of metals and the removal of particles by APM are published elsewhere. Together, these studies provide a complete set of process response surfaces for the SC-1 chemistry. These surfaces can be used to select the most promising regime of parameter space for any particular process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 135
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Smith, Shelley, Christenson, K. K. and Werho, Dennis, Proceedings of the 1995 Semiconductor Pure Water and Chemicals Conference, edited by Balazs, M. (Balazs Analytical Laboratory, Sunnyvale, CA, 1995).Google Scholar
2. Christenson, K. K., Smith, Shelley and Werho, Dennis, Proceedings of the 1995 Semiconductor Pure Water and Chemicals Conference, edited by Balazs, M. (Balazs Analytical Laboratory, Sunnyvale, CA, 1995).Google Scholar
3. Christenson, K. K. and Smith, Shelley, submitted to Proceedings of the Fourth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, edited by Ruzyllo, J. and Novak, R. (The Electrochemical Society, Pennington, NJ, 1996).Google Scholar
4. Kern, W. and Puotinen, D., RCA Review, 31, 187–206 (1970).Google Scholar
5. Kern, W., Proceedings of the First International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, edited by Ruzyllo, J. and Novak, R. (The Electrochemical Society, PV 90-9, Pennington, NJ, 1990) pp. 3–19.Google Scholar
6. Sugihara, Y., Shimokawa, S. and Oshida, Y., Proceedings of the 1993 Semiconductor Pure Water and Chemicals Conference, edited by Balazs, M. (Balazs Analytical Laboratory, Sunnyvale, CA, 1992) pp. 191.Google Scholar
7. van den Meeraker, J. and van der Straaten, M., Journal of the Electrochemical Society, 137, 1239–1243 (1990).Google Scholar
8. Hossain, S. D., Extended Abstracts of the 1993 Spring Meeting in Honolulu, Hawaii (The Electrochemical Society, 93–1, Pennington, NJ, 1993) pp. 787–788.Google Scholar
9. Raheem, R. and Glick, J., Proceedings of the 1994 Semiconductor Pure Water and Chemicals Conference, edited by Balazs, M. (Balazs Analytical Laboratory, Sunnyvale, CA, 1994) pp. 226–241.Google Scholar
10. Takano, J. et al., Proceedings of the 1992 Semiconductor Pure Water and Chemicals Conference, edited by Balazs, M. (Balazs Analytical Laboratory, Sunnyvale, CA, 1992) pp. 199.Google Scholar
11. Ohmi, T., Miyashita, M., Itano, M., Imaoka, T. and Kawanabe, I., IEEE Transactions on Electron Devices, 139, 537 (1992).Google Scholar
12. Heyns, M. et al., Surface Chemical Cleaning and Passivation for Semiconductor Processing, edited by Higashi, G., Irene, E. and Ohmi, T. (Mater. Res. Soc., 315, Pittsburgh, PA, 1993) pp. 35–45.Google Scholar
13. Mori, K., Ishikawa, N., Shihoya, T. and Yamashita, A., Proceedings of the 1992 Semiconductor Pure Water and Chemicals Conference, edited by Balazs, M. (Balazs Analytical Laboratory, Sunnyvale, CA, 1992) pp. 191.Google Scholar
14. Heyns, M., presented at the 1995 Semiconductor Pure Water and Chemicals Conference, San Jose, CA 1995 (unpublished).Google Scholar
15. Malik, Igor J. et al., Extended Abstracts of the 1993 Spring Meeting in Honolulu, Hawaii (The Electrochemical Society, 93–1 Pennington, NJ, 1993) pp. 1133–1134.Google Scholar
16. Schmidt, H. F. et al., Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing edited by Ruzyllo, J. and Novak, R. (The Electrochemical Society, PV 94–7, Pennington, NJ, 1994) pp. 102–110.Google Scholar
17. Christenson, K., Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing edited by Ruzyllo, J. and Novak, R. (The Electrochemical Society, PV 94–7, Pennington, NJ, 1994) pp. 153–162.Google Scholar
18. Christenson, K. K., Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing edited by Ruzyllo, J. and Novak, R. (The Electrochemical Society, PV 94–7, Pennington, NJ, 1994) pp. 474–483.Google Scholar