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Effects of ECR N2O-Plasma Nitridation on Thermal Oxide Characteristics

Published online by Cambridge University Press:  15 February 2011

Jin-Woo Lee ,
Jung-Yeal Lee ,
Deuk-Sung Choi ,
Sung-Hoi Hur ,
Choong-Ki Kim  and
Chul-Hi Han
Jin-Woo Lee
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Jung-Yeal Lee
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Deuk-Sung Choi
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Sung-Hoi Hur
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Choong-Ki Kim
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Chul-Hi Han
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
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Abstract

The effects of electron cyclotron resonance (ECR) N2O-plasma nitridation on the characteristics of thermal SiO2 have been investigated. Although the ECR N2O-plasma nitridation was performed at low-temperature(≤400°C), it was found that oxynitride layer can be successfully grown at the Si/SiO2 interface. The atomic concentration of nitrogen near the Si/SiO2 interface was comparable to that of high temperature N2O annealing. The ECR N2O-plasma nitrided thermal SiO2 exhibits higher breakdown field characteristics, higher time-to-breakdown and charge-to-breakdown values in comparison with those of thermal SiO2. In addition, ECR N2O-plasma nitrided thermal SiO2 shows improved charge trapping properties

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 143
Copyright
Copyright © Materials Research Society 1995

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References

1 Hwang, H., Ting, W., Kwong, D.-L., and Lee, J., IEDM Tech. Dig,. 421 (1990)Google Scholar
2 Morimoto, T., Momose, H. S., Ozawa, Y., Yamabe, K., and Iwai, H., IEDM Tech. Dig., 429 (1990)Google Scholar
3 Liu, Z., Wann, H.-J., Ping, Ko, K., Hu, C., and Cheng, Y. C., IEEE Electron Device Lett., 13, 519 (1992)Google Scholar
4 Hori, T., Iwasaki, H., and Tsuji, K., IEEE Trans. Electron Devices, 36, 340 (1989)Google Scholar
5 Liang, M. S., Chang, C., Tzow, Y. T., Hu, C., and Broderson, R., IEEE Trans. Electron Devices, 31, 1238 (1984)Google Scholar