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Effect of ITO Carrier Concentration on the Performance of Organic Light-Emitting Diodes

Published online by Cambridge University Press:  21 March 2011

Furong Zhu ,
Keran Zhang ,
C. H. A. Huan ,
A.T.S. Wee ,
Ewald Guenther  and
Chua Soo Jin
Furong Zhu
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore 117206
Keran Zhang
Affiliation:
Department of Physics, National University of Singapore Lower Kent Ridge Road, Singapore 119260
C. H. A. Huan
Affiliation:
Department of Physics, National University of Singapore Lower Kent Ridge Road, Singapore 119260
A.T.S. Wee
Affiliation:
Department of Physics, National University of Singapore Lower Kent Ridge Road, Singapore 119260
Ewald Guenther
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore 117206
Chua Soo Jin
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore 117206
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Abstract

The indium tin oxide (ITO) anodes for organic light emitting diode (OLED) were made from an oxidised target with In2O3 and SnO2 in a weight proportion of 9:1 using the RF magnetron sputtering method. The comparable ITO anodes with different carrier concentrations were prepared by varying the hydrogen partial pressure during film deposition. The current-luminance-voltage characteristics of the devices indicated that a high carrier concentration in ITO plays a role in improving OLED performance. A maximum efficiency of 3.8 cd/A was achieved when an ITO anode with a higher carrier concentration of 9×1020 cm−3 was used in a fluorene based OLED. This efficiency is about 1.5 times higher than that of an identical device made with an ITO anode having a lower carrier concentration of 5×1020 cm−3. The increase in electroluminescent efficie ncy reflects an enhanced hole-injection in the device. We consider that enhanced hole injection is due to the reduced band bending in ITO when it has a high carrier concentration

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 598: Symposium BB – Electrical, Optical, & Magenetic Properties...V , 1999 , BB11.11
Copyright
Copyright © Materials Research Society 1999

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