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Effect of Annealing and Passivation on the Electromigration and Linewidth Dependence

Published online by Cambridge University Press:  15 February 2011

R.O. Carnes ,
C.H. Lee ,
P.T. Keating ,
E.M. Barrall II ,
B.R. York ,
G.M. Grivna ,
S.W. Bauguess ,
M.L. Dreyer  and
S.R. Edwards
R.O. Carnes
Affiliation:
Motorola-SPS, MD COM100, 5005 E. McDowell Rd., Phoenix, AZ 85008
C.H. Lee
Affiliation:
Motorola-SPS, MD COM100, 5005 E. McDowell Rd., Phoenix, AZ 85008
P.T. Keating
Affiliation:
Motorola-SPS, MD MOS2, 3501 Ed Bluestein Blvd., Austin TX 78721
E.M. Barrall II
Affiliation:
IBM-SSD, 5600 Cottle Rd., San Jose, CA 95193
B.R. York
Affiliation:
IBM-SSD, 5600 Cottle Rd., San Jose, CA 95193
G.M. Grivna
Affiliation:
Motorola-SPS, MD EL609, 2100 E Elliot Rd., Tempe, AZ 85284
S.W. Bauguess
Affiliation:
Motorola-SPS, MD M350, 2200 W. Broadway Rd, Mesa, Arizona 85202 M/S M350
M.L. Dreyer
Affiliation:
Motorola-SPS, MD M350, 2200 W. Broadway Rd, Mesa, Arizona 85202 M/S M350
S.R. Edwards
Affiliation:
Motorola-SPS, MD M350, 2200 W. Broadway Rd, Mesa, Arizona 85202 M/S M350
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Abstract

Continued miniaturization of conductor geometry below 0.5μm has by a concomitant decrease in Al deposition temperature, typically below 300°C. The degree of reliability exhibited by these films is strongly dependent on the grain size distribution and metallurgical configuration. This investigation focuses on the impact of post-deposition processing on changes in conductor microstructure and electromigration for films deposited at low temperature. AlCu(l%)Si(l%) was deposited at 300°C on PECVD phosphosilicate glass. The impact of post-deposition thermal budget on the as deposited grain size and distribution, preferred orientation and stress/strain states were analyzed using scanning electron microscopy, X-Ray diffraction and bending beam technique, respectively. These characteristics were also measured on unpassivated films subjected to the same thermal budget as SiO2 passivated films so that the geometric confinement and Al-SiO2 surface interaction could be quantified. Electromigration characteristics were measured for linewidths in the range W=1.0μm to W=10μm, for passivated and unpassivated films. A direct correlation between passivation and grain size was observed for both failure modes. This paper will also discuss the relationship between film stress and preferred orientation, the observed failure modes and their linewidth dependence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 435
Copyright
Copyright © Materials Research Society 1995

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References

1 Kisselgof, L., Baranowski, S.P., Broomfield, M.C., Spooner, T., Elliot, L., Brooke, L., Lloyd, J.R., SPIE V1805, Submicrometer Metallization (1992), 154–163.Google Scholar
2 Domenicucci, A., Vook, R.W., J.Vac.Sci.Technol. (1991), 581–585.Google Scholar
3 Gardner, D.S., Longworth, H.P., Flinn, P.A., VMIC Conf (1990), 243-253.Google Scholar
4 Dirks, A.G., Augur, R.A., De Veirman, A.E.M., Thin Solid Films, v246 (1994), 164–171.Google Scholar
5 Kwok, T., Chan, K.K., Simko, J., J.Vac.Sci.Technol. A, V9,No.4 (1991), 2523–2526.Google Scholar
6 Akiya, M., Nakamura, H., Arita, Y., J. Electrochem. Soc., V137,No.7, (1990), 2252–2256.Google Scholar
7 Rodbell, K.P., Knorr, D.B., Mis, J.D., J. of Electronic Materials, V22, No.6, (1993), p 597–606.Google Scholar
8 Cho, J., Thompson, C.V., J. of Electronic Materials, V19, No.11, (1990), 1207–1212 Google Scholar
9 Campbell, A.N., Mikawa, R.E., Knorr, D.B., V22, No.6, (1993), 589–596.Google Scholar
10 Baerg, W., Wu, K., Davies, P., Dao, G., Fraser, D., IEEE-IRPS, (1990), 119 123.Google Scholar
11 Babcock, S.E. Balluffi, R.W., Acta Metall. V37,No.9,(1989), 2367–2376.Google Scholar
12 Bauer, C.L., Tang, P.F., Defect and Diffusion Forum, V.66–69, (1989), 1143–1152.Google Scholar
13 Ho, P.S., Moske, M..A., Hu, C.K., SPIE V1805, Submicrometer Metallization (1992), 116–129.Google Scholar
14 Besser, P.R., Ph.D. Dissertation, Stanford University, (1993)Google Scholar
15 Clarke, A.P., Saimoto, S., Ho, P., AIP Conference Proceedings 305, (1994), 126–136.Google Scholar
16 Baldini, G.L., Scorzoni, A., IEEE-Trans on Electron Devices, V38, No.3, (1991), 469–475.Google Scholar
17 Matsunaga, N., Shibata, H., Hashimoto, K., 1992 Symposium on VLSI Technology Digest of Technical Papers, 76–77.Google Scholar
18 Besser, P.R., Bader, S., Venkatraman, R., Bravman, J.C., MRS Symp. Proc. V309, (1993), 255–260.Google Scholar
19 Shute, C.J., Cohen, J.B., J. Mater. Res., Vol.6, No.5, (1991), 950–956.Google Scholar
20 Chew, H.Z., Fieber, C.A., Kelley, P., Lai, T.T., Ryan, V., SPIE V1805, Submicrometer Metallization (1992), 164–168.Google Scholar
21 Anderson, S.G.H., Yeo, I.S., Jawarani, D., and Ho, P.S., SPIE V1805, Multilevel Interconnect (1993), 130–137.Google Scholar
22 Anderson, S.G.H., Yeo, I.S., Ho, P.S., Ramaswami, S., Cheung, R., MRS Symp. Proc. V309, (1993), 261–268.Google Scholar
23 Grivina, G., Leathersich, C., Shin, H., Cowden, W.G., J. Vac.SCi. Technol. B, V11,No.1, (1993), 55–60.Google Scholar
24 Electromigration in Thin Films, by F.M. d’Heurle, P.S. Ho.Google Scholar
25 Agarwala, B.N., Attardo, M.J., Ingraham, A.P., J. Appl. Phys., V41,No.10, (1970), 3954–3955.Google Scholar
26 Attardo, M.J., Rutledge, R., Jack, R.C., J. Appl. Phys., V42, No.11, (1971), 4343–4349.Google Scholar
27 Arzt, E., Nix, W.D., J. Mater. Res. V6, No.4, (1991), 731–736 Google Scholar
28 M.L, Dreyer, Varker, C.J., Appl. Phys. Lett., V60, No.l5, (1992), 1860–1862.Google Scholar
29 Kardiawarman, . et al. , Applications of a multifiber collimating lens to thin film structure analysis, SPIE proceedings, 1995.Google Scholar