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Dopant Incorporation of Boron Implanted Silicon During Rapid Thermal Annealing

Published online by Cambridge University Press:  28 February 2011

Hung-Yu Liu Hung-Yu Liu  and
Peng-Heng Chang Peng-Heng Chang
Hung-Yu Liu Hung-Yu Liu
Affiliation:
Jiann Liu Materials Science Laboratory, Bor-Yen Mao semiconductor Process and Design Center, Texas Instruments Inc.P.O.Box 655936 MS 147 Dallas, TX. 75265
Peng-Heng Chang Peng-Heng Chang
Affiliation:
Jiann Liu Materials Science Laboratory, Bor-Yen Mao semiconductor Process and Design Center, Texas Instruments Inc.P.O.Box 655936 MS 147 Dallas, TX. 75265
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Abstract

Surface layer damage of boron implanted (100) silicon crystals were characterized by x-ray rocking curves using computer fitting procedures. The implantation was carried out at ion energy of 130 KeV with the dose of 1*1016 atoms/cm2. The in-depth strain distribution of the surface layer after rapid thermal annealing was discussed based on x-ray rocking curve observation. It is clearly revealed that the strain profile reverses completely from the positive (tensile) strain in the as-implanted condition to the negative (compressive) strain after annealing. This change is ascribed to the incorporation of boron atoms from interstitial sites to substitutional positions. The results were also compared with transmission electron microscopy (TEM) observations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 15
Copyright
Copyright © Materials Research Society 1987

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References

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