Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-29T07:31:11.004Z Has data issue: false hasContentIssue false

Direct Correlation of Transport Properties and Microstructure In Y1Ba2Cu3O7-x Thin Film Grain Boundaries*

Published online by Cambridge University Press:  15 February 2011

B. V. Vuchic
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439 Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
K. L. Merkle
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
D. B. Buchholz
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
R. P. H. Chang
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
L. D. Marks
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
Get access

Abstract

Individual 45° [001] tilt grain boundaries in Y1Ba2Cu3O7-x thin films grown on biepitaxial substrates were studied. The thin films were grown using both pulsed organometallic beam epitaxy (POMBE) and laser ablation. Transport characteristics of the individual grain boundaries were measured including resistance - temperature (R-T) and current - voltage (I-V) dependencies with and without an applied magnetic field. In order to elucidate possible structural origins of the differences in transport behavior, the same grain boundaries which were electrically characterized were subsequently thinned for electron-microscopy analysis. Transmission-electron-microscopy and high-resolution-electron-microscopy were used to structurally characterize the grain boundaries. The macroscopic and microscopic structures of two boundaries, a nominally resistive and a superconducting grain boundary, are compared.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Work supported by the National Science Foundation Office of Science and Technology Centers, under contract #DMR 91-20000 (BVV, DBB) and the U.S. Department of Energy, Basic Energy Sciences-Materials Science, under contract #W-31-109-ENG-38 (KLM).

References

1. Dimos, D., Chaudhari, P. and Mannhart, J., Phys. Rev. B 41, 4038 (1990).Google Scholar
2. Babcock, S. E., Cai, X. Y., Kaiser, D. L. and Larbalestier, D. C., Nature 347, 167 (1990).Google Scholar
3. Ivanov, Z. G., Nilsson, P. A., Winkler, D., Alarco, J. A., Claeson, T., Stepantsov, E. A. and Tzalenchuk, A. Y., Appl. Phys. Lett. 59, 3030 (1991).Google Scholar
4. Russek, S. E., Lathrop, D. K., Moeckly, B. H., Buhrman, R. A., Shin, D. H. and Silcox, J., Appl. Phys. Lett. 57, 1155 (1990).Google Scholar
5. Char, K., Colclough, M. S., Garrison, S. M., Newman, N. and Zaharchuk, G., Appl. Phys. Lett. 59, 733 (1991).Google Scholar
6. Buchholz, D. B., Duray, S. J., Schulz, D. L., Marks, T. J., Ketterson, J. B. and Chang, R. P. H., Materials Chemistry and Physics 36, 377 (1994).Google Scholar
7. Liu, L., Nowak, E. R., Jaeger, H. M., Vuchic, B. V., Merkle, K. L., Buchholz, D. B. and Chang, R. P. H., submitted to Phys. Rev. B - Rapid Communications (1994).Google Scholar
8. Moeckly, B. H., Lathrop, D. K. and Buhrman, R. A., Phys. Rev. B 47,400 (1993).Google Scholar
9. Samelli, E., Chaudhari, P. and Lacey, J., Appl. Phys. Lett., 62, 777 (1993).Google Scholar