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Dielectrics on Silicon Thermally Grown or Annealed in a Nitrogen Rich Environment

Published online by Cambridge University Press:  22 February 2011

H. Barry Harrison ,
Andrew Misiura ,
Sima Dimitrijev ,
Denis Sweatman ,
Z. Yao  and
Y.T. Yeow
H. Barry Harrison
Affiliation:
Griffith University, School of Microelectronic Engineering, Brisbane, Queensland, Australia
Andrew Misiura
Affiliation:
Griffith University, School of Microelectronic Engineering, Brisbane, Queensland, Australia
Sima Dimitrijev
Affiliation:
Griffith University, School of Microelectronic Engineering, Brisbane, Queensland, Australia
Denis Sweatman
Affiliation:
Griffith University, School of Microelectronic Engineering, Brisbane, Queensland, Australia
Z. Yao
Affiliation:
Griffith University, School of Microelectronic Engineering, Brisbane, Queensland, Australia
Y.T. Yeow
Affiliation:
The University of Queensland, St Lucia, Brisbane, Queensland, Australia
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Abstract

In this paper we review various methods of improving the properties of extremely thin dielectrics (<20 nm) using a nitrogen rich environment. The three main gases considered being ammonia, and nitrous and nitric oxides. We present original results for nitric oxide exposed silicon and suggest that for ultra thin dielectric (<5 nm) that these layers are generally superior to any others, whilst for thicker layers oxides annealed in nitrous oxides appear to display the best properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 151
Copyright
Copyright © Materials Research Society 1994

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