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Device Characteristics of a Poly-Silicon Thin Film Transistor Fabricated by Milc at Low Temperature

Published online by Cambridge University Press:  10 February 2011

Seok-Woon Lee ,
Byung-IL Lee ,
Tae-Hyung Ihn ,
Tae-Kyung Kim ,
Young-Tae Kang  and
Seung-Ki Joo
Seok-Woon Lee
Affiliation:
Samsung Electronics Co., Ltd., Nongseo-ri, Kiheung-eup, Yongin-city, Kyungki-do, Korea
Byung-IL Lee
Affiliation:
Dept. of Metall. Eng., Seoul Nat'l Univ., Shillim-dong, Kwanak-ku, Seoul, Korea
Tae-Hyung Ihn
Affiliation:
Dept. of Metall. Eng., Seoul Nat'l Univ., Shillim-dong, Kwanak-ku, Seoul, Korea
Tae-Kyung Kim
Affiliation:
Samsung Electronics Co., Ltd., Nongseo-ri, Kiheung-eup, Yongin-city, Kyungki-do, Korea
Young-Tae Kang
Affiliation:
Samsung Electronics Co., Ltd., Nongseo-ri, Kiheung-eup, Yongin-city, Kyungki-do, Korea
Seung-Ki Joo
Affiliation:
Dept. of Metall. Eng., Seoul Nat'l Univ., Shillim-dong, Kwanak-ku, Seoul, Korea
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Abstract

High performance poly-Si thin film transistors were fabricated by using a new crystallization method, Metal-Induced Lateral Crystallization (MILC). The process temperature was kept below 500°C throughout the fabrication. After the gate definition, thin nickel films were deposited on top of the TFT's without an additional mask, and with a one-step annealing at 500°C, the activation of the dopants in source/drain/gate a-Si films was achieved simultaneously with the crystallization of the a-Si films in the channel area. Even without a post-hydrogenation passivation, mobilities of the MILC TFT's were measured to be as high as 120cm2/Vs and 90cm2/Vs for n-channel and p-channel, respectively. These values are much higher than those of the poly-Si TFT's fabricated by conventional solid-phase crystallization at around 6001C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 195
Copyright
Copyright © Materials Research Society 1997

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