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Development of Selenization/Sulfurization Process for High Quality Cu(In, Ga)(S, Se)2 Solar Cells on High Strain Point Glass Substrates

Published online by Cambridge University Press:  20 March 2013

Takeshi Tomizawa ,
Reo Usui ,
Takeshi Okato  and
Hidefumi Odaka
Takeshi Tomizawa
Affiliation:
Research Center, Asahi Glass Co., Ltd., 1150 Hazawa-cho, Kanagawa-ku, Yokohama 221-8755, Japan
Reo Usui
Affiliation:
Research Center, Asahi Glass Co., Ltd., 1150 Hazawa-cho, Kanagawa-ku, Yokohama 221-8755, Japan
Takeshi Okato
Affiliation:
Research Center, Asahi Glass Co., Ltd., 1150 Hazawa-cho, Kanagawa-ku, Yokohama 221-8755, Japan
Hidefumi Odaka
Affiliation:
Research Center, Asahi Glass Co., Ltd., 1150 Hazawa-cho, Kanagawa-ku, Yokohama 221-8755, Japan
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Abstract

This study provides a recipe of a 2-step selenization and sulfurization method for high strain point (HSP) glass to improve the quality of Cu(In, Ga)(S, Se)2 (CIGSSe). The recipe is distinguished by slow selenization growth before sulfurization growth at the high temperature of 580 °C. We used proto-type HSP glass instead of standard soda lime glass (SLG) to tolerate this higher temperature process. The provided slow selenization recipe improved an averaged relative efficiency by 14 percent compared to a rapid selenization recipe. We confirmed the improvement of the quality of CIGSSe which was characterized by the high crystal quality, the smooth surface, the uniform depletion layer and reduced defects as measured by XRD, SEM, EBIC and Admittance spectroscopy.

Keywords

photovoltaicthin filmcrystal growth
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1493: Symposium E/H – Photovoltaic Technologies, Devices and Systems Based on Inorganic Materials, Small Organic Molecules and Hybrids , 2013 , pp. 225 - 229
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Jackson, P. et al. ., Prog. Photovolt: Res. App., 19, 894, (2011).CrossRefGoogle Scholar
Nakamura, M. et al. ., 38th IEEE PVSC, 1807, (2012).Google Scholar
Repins, I. et al. ., Prog. Photvol., 16, 235 (2008).CrossRefGoogle Scholar
Mannstadt, W. et al. ., 25th EU PVSEC, WCPEC-5, (2010).Google Scholar
Contreras, M. A. et al. ., Prog. Photovolt: Res. Appl.., 20, 843, (2012).CrossRefGoogle Scholar
Usui, R. et al. ., Proc. 38th IEEE PVSC, 3108, (2012) .Google Scholar
Okato, T. et al. ., Proc. 27th EUPVSEC, 2216, (2012).Google Scholar
Walter, T. et al. ., J. Appl. Phys., 80, 4411, (1996).CrossRefGoogle Scholar
Jasenek, A. et al. ., J. Appl. Phys., 87, 594, (2000).CrossRefGoogle Scholar
Hergert, F. et al. ., J. Phys. Chem. Solids, 66, 1903 (2005).CrossRefGoogle Scholar