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Development and Optimization of Slurry for Ru CMP

Published online by Cambridge University Press:  01 February 2011

In-Kwon Kim ,
Tae-Young Kwon ,
Jin-Goo Park  and
Hyung-Soon Park
In-Kwon Kim
Affiliation:
[email protected], Hanyang University, Division of Materials and Chemical Engineering, 1271 Sa-dong, Ansan, 426-791, Korea, Democratic People's Republic of, +82-31-417-3701
Tae-Young Kwon
Affiliation:
[email protected], Hanyang University, Division of Materials and Chemical Engineering, 1271 Sa-dong, Ansan, 426-791, Korea, Democratic People's Republic of
Jin-Goo Park
Affiliation:
[email protected], Hanyang University, Division of Materials and Chemical Engineering, 1271 Sa-dong, Ansan, 426-791, Korea, Democratic People's Republic of
Hyung-Soon Park
Affiliation:
[email protected], Hynix semiconductor Inc., Memory Research & Development Division, San 136-1, Ami-Ri, Bubal-eub, Icheon-Si, 467-701, Korea, Democratic People's Republic of
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Abstract

In this study, Ruthenium (Ru) chemical mechanical planarization (CMP) slurry was studied and developed to apply it for the formation of Ru bottom electrode in DRAM capacitor. An acidic chemical was chosen as both oxidant and etchant. The effects of the chemical on polishing and etching behavior were investigated as functions of chemical concentration and pHs. The static etch rate of Ru increased with increase of chosen chemical concentration. Also, thin Ru oxide was generated in chemical solution. The highest etching and removal rate were obtained in slurry of pH 6. Ru over etching was generated due to the high etch rate of Ru, and then good planarity was not obtained. However, because Ru over etching was prevented due to low etch rate of Ru, the plarnarity and isolation of each capacitor in slurry of pH 9 was acquired successfully.

Keywords

RuCMPslurry
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 991: Symposium C – Advances and Challenges in Chemical Mechanical Planarization , 2007 , 0991-C10-04
Copyright
Copyright © Materials Research Society 2007

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References

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