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Detection Limits of a nip a-Si:H Linear Array Position Sensitive Detector

Published online by Cambridge University Press:  21 March 2011

R. Martins
Affiliation:
Materials Science Department of, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal;
D. Costa
Affiliation:
Materials Science Department of, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal;
H. Águas
Affiliation:
Materials Science Department of, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal;
F. Soares
Affiliation:
Materials Science Department of, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal;
A. Marques
Affiliation:
Tekelec, Chão de Murches 2750 Cascais, Portugal
I. Ferreira
Affiliation:
Materials Science Department of, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal;
P. Borges
Affiliation:
Tekelec, Chão de Murches 2750 Cascais, Portugal
E. Fortunato
Affiliation:
Materials Science Department of, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal;
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Abstract

This paper presents results of the spatial and frequency detection limits of an integrated array of 32 one-dimensional amorphous silicon thin film position sensitive detectors with a nip structure, under continuous and pulsed laser operation conditions. The data obtained show that 0.45×0.06 cm arrays, occupying a total active area of about 1 cm2 have a spatial resolution better than 10 m m (modulation transfer function of about 0.2), with a cut-off frequency of about 6.8 KHz. Besides that, under pulsed laser conditions the device non-linearity has its minimum (about 1.6%), for a frequency of about 200Hz. Up to the limits of the cut-off frequency, the device nonlinearity increases to values above 4%.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

[1] Middelhoek, S. and Audet, S.A. in Microelectronics and Signal Processing - Silicon Sensors (Academic Press, London, 1989).Google Scholar
[2] Martins, R. and Fortunato, E., in “The Technology and Applications of Amorphous Silicon”, ed. by Street, R., Spring Verlagen, pp. 342403 (2000).Google Scholar
[3] Fortunato, E. and Martins, R., Sensors & Actuators, A68, 244 (1998).Google Scholar
[4] Martins, R., Fortunato, E., Figueiredo, J., Soares, F., Brida, D., Silva, V., Cabrita, A.. Journal of Non-Crystalline Solids 299–302, 1283 (2002).Google Scholar
[5] Handbook of Optics, eds Bass, M. et al, McGraw Hill, (1995) Vol. I, chapter 15.Google Scholar