Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-06T01:18:55.671Z Has data issue: false hasContentIssue false
  • English
  • Français

Delamination of LPD Tungsten Films by Residual Stress

Published online by Cambridge University Press:  22 February 2011

A. Borer ,
B. Derby  and
I. May
A. Borer
Affiliation:
Department of Metallurgy and Science of Materials, Oxford University, Parks Road, Oxford OXi 3PH, U.K.
B. Derby
Affiliation:
Department of Metallurgy and Science of Materials, Oxford University, Parks Road, Oxford OXi 3PH, U.K.
I. May
Affiliation:
GEC Research Limited, Hirst Research Centre, East Lane, Wembley, Middlesex HA9 7PP, U.K.
Get access

Abstract

Thin tungsten films have been deposited on sapphire and glass substrates using laser photolytic deposition from a tungsten hexa-fluoride precursor. Failure of the films is caused by the presence of large residual stresses (1–5 GPa). Compressive and tensile stresses are found at different stages of film growth and either may be responsible for delamination. Early compression is caused by oxidation and impurity influenced intrinsic stress. Tensile stress occurs with microstructural changes but is not maintained with film growth. Large stress gradients, indicative of up to 0.75–1.2% lattice strain difference across the film, are found through both compressive and tensile films and are not explained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 130: Symposium C – Thin Films: Stresses and Mechanical Properties I , 1988 , 231
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Marshall, D.B., Evans, A.G., J. Appl. Phys. 56, 2632 (1984).10.1063/1.333794Google Scholar
2. Evans, A.G. and Hutchinson, J.W., Int. J. Solids Structures, 20 (5), 455 (1984).10.1016/0020-7683(84)90012-XGoogle Scholar
3. Miller, A., Manasevit, H.M., Forbes, D.H. and Cadoff, I.B.,, J. Appl. Phys. 37, 2921 (1966).10.1063/1.1782160Google Scholar
4. Souk, J.H., O'Hanlon, J.F. and Angilello, J., J. Vac. Sci. Technol. A. 3, 2289 (1985).10.1116/1.572866Google Scholar
5. Aberman, R. and Koch, R., Thin Solid Films 142, 67 (1986).CrossRefGoogle Scholar
6. Tang, C.C. and Hess, D.W., Appl. Phys. Lett. 45 (6), 633 (1984).10.1063/1.95337Google Scholar
7. Wells, A.F., Structural Inorganic Chemistry, (Clarendon 1984), p. 1283.Google Scholar
8. Barrett, C.S., Massalski, T.B., Structure of Metals, 3rd rev.edn. (Pergamon 1980) p. 472.Google Scholar