Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-29T09:07:17.024Z Has data issue: false hasContentIssue false
  • English
  • Français

Defects and Growth of Diamond Wafers

Published online by Cambridge University Press:  21 February 2011

D. Shechtman
D. Shechtman*
Affiliation:
Department of Materials Engineering, Technion, Haifa, Israel. Currently at JHU, NIST and NRL.
Get access

Abstract

Crystallographic defects which form during growth of CVD diamond were studied and their effect on the surface structure of the growing wafer evaluated. The most abundant defects are β=3 twins boundaries whose density is very high at the nucleation side and as low as one twin per 10 /μm at the growth surface. The intersection of these twin boundaries with one another results in a formation of higher order twin boundaries. β=9 as well as β=27 and β=81 boundaries have been analyzed. The surface crystallography of optical quality diamond wafers reveals the role of β=3 twins in promoting fast growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 297
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Shechtman, D., Hutchison, J.L., Robins, L.H., Farabaugh, E.N. and Feldman, A., “Growth defects in diamond films” J. Mater. Res., Vol. 8, No. 3, (1993) 1.Google Scholar
2. Shechtman, D., Feldman, A. and Hutchison, J.L., “High order twin boundaries in CVD diamond films”, Materials Letters 17 (1993) 211–216.Google Scholar
3. van der Drift, A., “Evolutionary selection a principle governing growth orientation in vapour-deposited layers”, Philips Res. Reports 22 (1967) 267–288. Press, New York, 1991 p. 611.Google Scholar
4. Seidensticker, R.G. and Hamilton, D.R., “Growth mechanisms in germanium dendrites” J. Appl. Phys. 34 (1963) 3113.Google Scholar