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Defect Evolution During Laser Annealing

Published online by Cambridge University Press:  01 February 2011

Susan B. Felch ,
Abhilash Mayur ,
Vijay Parihar ,
Faran Nouri ,
Kevin S. Jones ,
Daniel E. Zeenberg  and
Britta E. Jones
Susan B. Felch
Affiliation:
[email protected], Applied Materials, Front End Products Group, 974 E. Arques Avenue, M/S 81280, Sunnyvale, CA, 94085, United States, 408-584-1273, 408-584-1194
Abhilash Mayur
Affiliation:
[email protected], Applied Materials, Front End Products Group, 974 E. Arques Avenue, Sunnyvale, CA, 94085, United States
Vijay Parihar
Affiliation:
[email protected], Applied Materials, Front End Products Group, 974 E. Arques Avenue, Sunnyvale, CA, 94085, United States
Faran Nouri
Affiliation:
[email protected], Applied Materials, Front End Products Group, 974 E. Arques Avenue, Sunnyvale, CA, 94085, United States
Kevin S. Jones
Affiliation:
[email protected], University of Florida, Dept. of Materials Science, Gainesville, FL, 32611, United States
Daniel E. Zeenberg
Affiliation:
[email protected], University of Florida, Dept. of Materials Science, Gainesville, FL, 32611, United States
Britta E. Jones
Affiliation:
[email protected], University of Florida, Dept. of Materials Science, Gainesville, FL, 32611, United States
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Abstract

Implementation of millisecond annealing requires the identification of the operating conditions for that technique which minimize the residual defects. In addition, possible combinations of low temperature annealing with millisecond annealing could result in minimal residual defects. The samples studied here were implanted with Ge+ pre-amorphization and boron dopant ions and were activated with a scanning laser annealing technique with maximum temperature dwell times of about one millisecond. The laser anneal conditions were varied, along with combinations of spike anneals. The annealed samples were analyzed by plan-view transmission electron microscopy (TEM) to measure the residual defect density and size. The effects of spike temperature, laser annealing temperature, and scan rate will be discussed.

Keywords

laser annealingdefectstransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 912: Symposium C – Doping Engineering for Device Fabrication , 2006 , 0912-C04-03
Copyright
Copyright © Materials Research Society 2006

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