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Decrease in Minority Carrier Lifetime of Crystalline Silicon Caused by Rapid Heating

Published online by Cambridge University Press:  18 May 2012

Toshiyuki Sameshima ,
Kochi Betsuin  and
Shinya Yoshidomi
Toshiyuki Sameshima
Affiliation:
Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
Kochi Betsuin
Affiliation:
Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
Shinya Yoshidomi
Affiliation:
Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Abstract

Change in the light-induced minority carrier effective lifetime τeff of crystalline silicon caused by rapid laser heating is reported. The top surface of n- and p-type silicon substrates with thicknesses of 520 μm coated with thermally grown SiO2 layers were heated by a 940 nm semiconductor laser for 4 ms. τeff was measured by a method of microwave absorption caused by carriers induced by 620 nm light illumination at 1.5 mW/cm2. τeff for light illumination of the top surfaces was decreased to 1.0x10-5 and 4.8x10-6 s by laser heating at 5.0x104 W/cm2 for n- and ptype 520-μm-thick silicon substrates, respectively. The decrease in τeff resulted from the generation of defect states associated with the carrier recombination velocity at the top surface region, S top. Laser heating increased S top to 6000 and 10000 cm/s for n- and p-type silicon samples, respectively. Heat treatment at 400oC for 4h markedly decreased S top to 21 and 120 cm/s, respectively, for n- and p-type silicon samples heated at 5.0x104 W/cm2. Laser heating at 4.0x104 W/cm2 for 4 ms was also applied to samples treated with Ar plasma irradiation at 50 W for 60 s, which decreased τeff (top) to 2.0x10-5 s and 3.9x10-6 s for n- and p-type silicon samples, respectively. Laser heating successfully increased τeff (top) to 2.8x10-3 and 4.1x10-4 s for n- and p-type samples, respectively. Laser irradiation at 4x104 W/cm2played a role of curing recombination defect sites.

Keywords

semiconductingSiphotovoltaic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1426: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology–2012 , 2012 , pp. 353 - 358
Copyright
Copyright © Materials Research Society 2012

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References

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