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CVD-Growth of Low-Doped 6H SIC Epitaxial Films

Published online by Cambridge University Press:  21 February 2011

O. Kordina ,
A. Henry ,
C. Hallin ,
R. C. Glass ,
A. O. Konstantinov ,
C. Hemmingsson ,
N. T. Son  and
E. Janzén
O. Kordina
Affiliation:
Department of Physics and Measurement Technology, Linköping University, 581 83 Linkoping, Sweden.
A. Henry
Affiliation:
Department of Physics and Measurement Technology, Linköping University, 581 83 Linkoping, Sweden.
C. Hallin
Affiliation:
Department of Physics and Measurement Technology, Linköping University, 581 83 Linkoping, Sweden.
R. C. Glass
Affiliation:
Department of Physics and Measurement Technology, Linköping University, 581 83 Linkoping, Sweden.
A. O. Konstantinov
Affiliation:
Department of Physics and Measurement Technology, Linköping University, 581 83 Linkoping, Sweden.
C. Hemmingsson
Affiliation:
Department of Physics and Measurement Technology, Linköping University, 581 83 Linkoping, Sweden.
N. T. Son
Affiliation:
Department of Physics and Measurement Technology, Linköping University, 581 83 Linkoping, Sweden.
E. Janzén
Affiliation:
Department of Physics and Measurement Technology, Linköping University, 581 83 Linkoping, Sweden.
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Abstract

We present a method for growing low-doped 6H SiC films using chemical vapour deposition in a hot-wall system. The study discusses the influence of temperature, growth rate and C/Si ratio on the purity of the layers. Furthermore, we make a comparison between methane and propane as carbon source, and investigate the influence of bake-out prior to growth. The films are characterised using low temperature photoluminescence. The relative intensity of the free exciton related luminescence as compared to impurity related bound exciton recombination is discussed in terms of material purity. A capacitance-voltage technique is used to determine the doping concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 405
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

[1] Kordina, O., Hallin, C., Glass, R.C., Henry, A. and Janzén, E., A Novel Hot-Wall CVD Reactor for SiC Epitaxy, presented at the ICSCRM, nov 1–3 1993, Washington DC, in press.Google Scholar
[2] Larkin, D.J., Neudeck, P.G., Powell, J.A., Matus, L.G., Site-Competition Epitaxy for Controlled Doping of CVD Silicon Carbide, presented at the ICSCRM, nov 1–3 1993, Washington DC, in press.Google Scholar
[3] Kimoto, T., Nishino, H., Yoo, W.S. and Matsunami, H., J. Appl. Phys. 73 (2), 1993.Google Scholar
[4] Pensi, G., Choyke, W.J., Electrical and Optical Characterization of SiC, Physica B, 185 (1993), 264–283.Google Scholar
[5] Clemen, L.L., Yoganathan, M., Choyke, W.J., Devaty, R.P., Kong, H.S., Edmond, J.A., Larkin, D.J., Powell, J.A., Burk, A.A. Jr, Calibration Procedure to Determine the Nitrogen Impurity Concentration in 6H SiC at Low Concentration Levels, presented at the ICSCRM, nov 1–3 1993, Washington DC, in press.Google Scholar