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Current-Stress-Induced Interface States in p-Si Mos Diodes Detected by a.c. Conductance Measurement

Published online by Cambridge University Press:  15 February 2011

Masao Inoue  and
Junji Shirafuji
Masao Inoue
Affiliation:
Osaka University, Faculty of Engineering, Department of Electrical Engineering, Yamada-oka 2-1, Suita, Osaka 565, Japan
Junji Shirafuji
Affiliation:
Osaka University, Faculty of Engineering, Department of Electrical Engineering, Yamada-oka 2-1, Suita, Osaka 565, Japan
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Abstract

Effect of Fowler-Nordheim current stress on (100) p-Si metal/oxide/semiconductor diodes have been studied by means of a.c. conductance measurement. Growth of two distinct peaks are observed in the depletion and the inversion resions corresponding to the generation of two kinds of defects in the upper and lower halves of the bandgap. These defects show different behaviors against the current stress in the energy profiles of the density and the capture cross section. The degradation of the Si/SiO2 interface is discussed in relation to the defect creation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 133
Copyright
Copyright © Materials Research Society 1995

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