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The Crystallization Mechanism of Poly-Si Thin Film Using High-power Nd:YAG Laser with Gaussian Beam Profile

Published online by Cambridge University Press:  01 February 2011

Hsiao Wen Zan ,
Chang Yu Huang ,
Kazuya Saito ,
Kouichi Tamagawa ,
Jack Chen  and
Tung Jung Wu
Hsiao Wen Zan
Affiliation:
[email protected], Display Institute, Department of Photonics, NCTU, 1001 Ta Hsueh Rd. MIRC Building 513R, National Chiao Tung University, HsinChu, N/A, 300, Taiwan
Chang Yu Huang
Affiliation:
[email protected], Display Institute, Department of Photonics, NCTU, 1001 Ta Hsueh Rd. MIRC Building 513R, National Chiao Tung University, HsinChu, N/A, 300, Taiwan
Kazuya Saito
Affiliation:
[email protected], Chiba Institute for Super Materials, ULVAC, Chiba, N/A, N/A, Japan
Kouichi Tamagawa
Affiliation:
[email protected], ULVAC Chigasaki, Kanagawa, N/A, N/A, Japan
Jack Chen
Affiliation:
[email protected], ULVAC Taiwan, HsinChu, N/A, 300, Taiwan
Tung Jung Wu
Affiliation:
[email protected], ULVAC Taiwan, HsinChu, N/A, 300, Taiwan
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Abstract

This paper studies the poly-Si crystallization mechanism under the high power (200 W) Nd:YAG solid state pulsed laser annealing system. It is found that the Gaussian-distributed laser beam profile successfully produce large super lateral growth process window. The devices in the SLG process window exhibit field-effect mobility around 250 cm2/V.s and the threshold voltage lower than 1 V. The influence of a-Si film thickness and the laser scan pitch on the process window is also carefully investigated.

Keywords

Siannealingcrystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A14-03
Copyright
Copyright © Materials Research Society 2006

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