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Correlation Between the Microstructures and the Electrical Properties of Ni/Au/Te/Au Contacts on n-GaAs

Published online by Cambridge University Press:  25 February 2011

X. W. Lin ,
J. Watté ,
K. Wuyts ,
W. Swider ,
R.E. Silverans ,
Z. Liliental-Weber  and
J. Washburn
X. W. Lin
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
J. Watté
Affiliation:
Laboratorium voor Vaste Stof-Fysika en Magnétisme, K.U. Leuven, B-3001 Leuven, Belgium
K. Wuyts
Affiliation:
lnteruniversitair Micro-Electronica Centrum (IMEC), Kapeldreef, 75, B-3001, Leuven, Belgium
W. Swider
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
R.E. Silverans
Affiliation:
Laboratorium voor Vaste Stof-Fysika en Magnétisme, K.U. Leuven, B-3001 Leuven, Belgium
Z. Liliental-Weber
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
J. Washburn
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
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Abstract

The structural evolution of Ni/Au/Te/Au contacts on n-GaAs (001) was examined, in correlation with their electrical properties as a function of rapid thermal annealing in the temperature range 350 - 600°C. It was found that heating at temperatures ≥ 550°C results in the formation of ohmic contacts, while contacts annealed at lower temperatures remain nonohmic. Transmission electron microscopy revealed that heating ≥ 450°C leads to extensive reactions between Ni/Au/Te/Au and GaAs and deep spike formation into the GaAs. The major reaction products were identified as NiAs and β-AuGa. Ga2Te3 grains, growing epitaxially on GaAs, were detected only in 550°C annealed samples. Heating to 600°C caused considerable Ga2Te3 loss. Implications of these results concerning the ohmic contact formation mechanism are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 295
Copyright
Copyright © Materials Research Society 1994

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References

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