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A Correlation between Si Surface Micro-Roughness and Atomic Concentration on Surface: Application to Micro-Roughness Measurement of Si

Published online by Cambridge University Press:  25 February 2011

I. Oki ,
T. Biwa ,
J. Kudo  and
H. Shibayama
I. Oki
Affiliation:
SHARP Corporation, VLSI Research Laboratories, 2613-1 Ichinomoto-cho Tenri City, Nara 632, JAPAN
T. Biwa
Affiliation:
SHARP Corporation, VLSI Research Laboratories, 2613-1 Ichinomoto-cho Tenri City, Nara 632, JAPAN
J. Kudo
Affiliation:
SHARP Corporation, VLSI Research Laboratories, 2613-1 Ichinomoto-cho Tenri City, Nara 632, JAPAN
H. Shibayama
Affiliation:
SHARP Corporation, VLSI Research Laboratories, 2613-1 Ichinomoto-cho Tenri City, Nara 632, JAPAN
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Abstract

We have developed a new method of evaluating Si surface micro-roughness, by forming thin oxide in HCI/H2O2 solution and then measuring the concentration of chlorine atoms or the total charge in this oxide. It is shown that this oxide does not affect the surface micro-roughness, and the surface concentration of chlorine atoms incorporated in this oxide and the total oxide charge are proportional to the surface micro-roughness, as obtained by AFM. From these correlations, it is possible to evaluate the surface microroughness for large areas compared with the areas of AFM measurement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 143
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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