Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-29T07:50:14.633Z Has data issue: false hasContentIssue false
  • English
  • Français

Controlled Growth of Amorphous Silicon Nanowires Via a Solid-Liquid-Solid (SLS) Mechanism

Published online by Cambridge University Press:  21 February 2011

H. F. Yan ,
Y. J. Xing ,
Q. L. Hang ,
D. P. Yu ,
J. Xu ,
H. Z. Zhang ,
Z. H. Xi  and
S. Q. Feng
H. F. Yan
Affiliation:
Department of Physics, State Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing, China
Y. J. Xing
Affiliation:
Department of Electronics, Peking University, Beijing, China
Q. L. Hang
Affiliation:
Department of Physics, State Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing, China
D. P. Yu
Affiliation:
Department of Physics, State Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing, China, [email protected]
J. Xu
Affiliation:
Department of Physics, State Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing, China
H. Z. Zhang
Affiliation:
Department of Physics, State Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing, China
Z. H. Xi
Affiliation:
Department of Electronics, Peking University, Beijing, China
S. Q. Feng
Affiliation:
Department of Physics, State Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing, China
Get access

Abstract

Amorphous silicon nanowires (a-SiNW's) with average diameter around 20 nm were synthesized at about 950° C under an Ar/H2 atmosphere on large area of a (11) Si substrate without supplying any gaseous or liquid Si sources. The Si substrate, deposited with a layer of Ni of about 40 nm thick, served itself as a silicon source for the growth of the a-SiNWs. Different from the well-known vapor-liquid-solid (VLS) for conventional whisker growth, it was found that growth of the a-SiNWs was controlled by a solid-liquid-solid mechanism, which is analogous to the VLS model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 581: Symposium F – Nanophase & Nanocomposite Materials II , 1999 , 225
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wager, R. S. and Ellis, W. C., Appl. Phys. Letter. 4. P.89 (1964).Google Scholar
2. Wager, R. S. and Ellis, W. C., Trans. Met. Soc. AIME 233, p.1053 (1965).Google Scholar
3. Wager, R. S. and Doherty, C. J., J. Electrochem. Soc 115, .93 (1968).Google Scholar
4. Givargizov, E. I., J. Cryst. Growth 31, 20 (1975).Google Scholar
5. Yazawa, M., Koguchi, M., Muto, A., Ozawa, M., Hiruma, K., Appl. Phys. Lett 61, p.2051 (1992).Google Scholar
6. Westwater, J., Gosain, D. P., Tomiya, S., Usui, S., Ruda, H., J. Vac. Sci. Technol. B15, p.554 (1997).Google Scholar
7. Yu, D. P., Lee, C. S., Bello, I., Sun, X. S., Tang, Y. H., Zhou, G. W., Bai, Z. G., Zhang, Z. and Feng, S. Q., Solid State Communications 105, p.403(1998).Google Scholar
8. Yu, D. P., Bai, Z.G., Ding, Y., Hang, Q. L., Zhang, H. Z., Wang, J. J., Zou, Y. H., Qian, W., Zhou, H. T., Xiong, G. C. and Feng, S. Q., Appl. Phys. Letters 72, p.3458(1998)Google Scholar
9. Ozaki, N., Ohno, Y., and Takeda, S., Appl. Phys. Letters 73, p.3700(1998).Google Scholar
10. Bai, Z. G., Yu, D. P., Zhang, H. Z., Ding, Y., Hang, Q. L., Xiong, G. C. and Feng, S. Q., Chemical Physics Letters 303, 311 (1999).Google Scholar
11. Zhang, H. Z., Kong, Y. C., Wang, Y. Z., Du, X., Bai, Z. G., Wang, J. J., Yu, D. P., Ding, Y., Hang, Q. L., Feng, S. Q., Solid State Communications 109, p.677(1999).Google Scholar
12. Yu, D. P., Bai, Z. G., Wang, J. J., Zou, Y. H., Qian, W., Fu, J. S., Zhang, H. Z., Ding, Y., Xiong, G. C. and Feng, S. Q., Physical Review B 59, p.2498(1999).Google Scholar
13. Li, H., Zhou, G. W., Yu, D. P., Huang, X. J., Chen, L. Q., Zhang, Z., to be published, (1999).Google Scholar
14. Zhou, G. W., Li, H., Sun, H. P., Yu, D. P, Wang, Y. Q., Chen, L. Q., and Zhang, Ze, Applied Physics Letters 75, p.2447 (1999).Google Scholar