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Condensation Mechanism for the Formation of Relaxed SiGe Layer Grown-on-Insulator

Published online by Cambridge University Press:  01 February 2011

Hun-Joo Lee ,
Gon-Sub Lee ,
Young-Soo Han ,
Seuck-Hoon Hong ,
Tae-Hun Shim  and
Jae-Gun Park
Hun-Joo Lee
Affiliation:
[email protected], Han Yang University, Nano scale semiconductor Enginnering, Room #101, HIT. Hanyang University 17 Haengdang-dong, Seoungdong-gu, Seoul, KOREA, Seoul, 133-791, Korea, Republic of, +82 2 2220 0234, +82 2 2296 1179
Gon-Sub Lee
Affiliation:
[email protected], Hanyang University, Nano scale semiconductor Enginnering, Nano SOI Process Laboratory, Room #101, HIT. Hanyang University 17 Haengdang-dong, Seoungdong-gu, Seoul, 133-791, Korea, Republic of
Young-Soo Han
Affiliation:
[email protected], Hanyang University, Nano scale semiconductor Enginnering, Nano SOI Process Laboratory, Room #101, HIT. Hanyang University 17 Haengdang-dong, Seoungdong-gu, Seoul, 133-791, Korea, Republic of
Seuck-Hoon Hong
Affiliation:
[email protected], Hanyang University, Nano scale semiconductor Enginnering, Nano SOI Process Laboratory, Room #101, HIT. Hanyang University 17 Haengdang-dong, Seoungdong-gu, Seoul, 133-791, Korea, Republic of
Tae-Hun Shim
Affiliation:
[email protected], Hanyang University, Nano scale semiconductor Enginnering, Nano SOI Process Laboratory, Room #101, HIT. Hanyang University 17 Haengdang-dong, Seoungdong-gu, Seoul, 133-791, Korea, Republic of
Jae-Gun Park
Affiliation:
[email protected], Hanyang University, Nano scale semiconductor Enginnering, Nano SOI Process Laboratory, Room #101, HIT. Hanyang University 17 Haengdang-dong, Seoungdong-gu, Seoul, 133-791, Korea, Republic of
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Abstract

The condensation method to grow a strained SiGe layer-on-insulator (ε-SGOI) has attracted interests for the application of high speed complementary metal–oxide–semiconductor field-effect transistors (CMOSFETs) because of high quality properties and effective process cost. Although many reports presented its superiority in a device performance to bonding and dislocation sink technologies, the mechanism by which the condensation method produces ε-SGOI has also not been clearly explained and the surface properties have not been evaluated. Thus, we investigated condensation mechanism in detail by characterizing a surface property and Ge profile in SiGe layer. For the experiment, first, a SiGe layer on silicon-on-insulator layer was epitaxally grown at 550 °C, and three different oxidation thicknesses were grown at 950 °C, i.e., 40, 60, 90 nm. From our investigation results, we found that there are three steps in producing ε-SGOI. For the first step, by the 40-nm-thick oxidation, a diffusion of Ge atoms in SiGe layer into Si layer-on-insulator was generated and Ge atoms were segregated into only surface oxide. It was observed that Ge profile of SiGe layer was shown a less graded profile. And, in the second step with 60-nm-thick oxidation, Ge atoms in SiGe layer into Si layer-on-insulator was diffused further than a first step did and Ge atoms were segregated into surface oxide. It was observed that Si layer was shown a fully graded profile. Lastly, in the third step with 90-nm-thick oxidation, the diffusion of Ge atoms in SiGe layer into Si layer-on-insulator was finished completely and Ge atoms were segregated into both surface and buried oxides. It was confirm that Ge profile of SiGe layer was shown a Gaussian profile rather than a graded profile, and dislocation sink occurred. Therefore, our talk will focus on the explanation for the mechanism by which condensation method produces ε-SGOI via characterizing a surface property, SiGe thickness, a remained Si thickness on insulator, and Ge concentration in SiGe layer.

Keywords

Gediffusiondislocations
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C03-18
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Volelsang, Th., Hormann, K. R. “Electron transport in strained Si layers on Sil-xGex substrates” Appl. Phys. Rev., Vol. 63, p. 186, (1993).Google Scholar
2. Sze, S. M. Physics of Semiconductor Devices, John Wiley & Sons, (1976), p. 849.Google Scholar
3.Semiconductor Industry Association, International Technology Roadmap for Semiconductor (2004); available at http://public.itrs.net.Google Scholar
4. Takagi, S. Mizuno, T. Tezuka, T. Sugiyama, N. Numata, T. Usuda, K. Moriyama, Y. Nakaharai, S. Koga, J. Tanbe, A. Hirashita, N. and Maeda, T. IEDM (2003).Google Scholar
5. Park, J. G. Lee, G. S. Kim, T. H. Hong, S. H. Kim, S. J. Song, J. H. Shim, T.H. Materials Science and Engineering B 134 (2006).Google Scholar
6. Bera, L. K. et al. , IEEE Electron Device Lett., Vol. 27, No.5, MAY (2006).Google Scholar
7. Di, Zengfeng, Paul, K., J. Appl. Phys., 97, 064504 (2005).Google Scholar
8. Huang, Lijuan, Chu, Jack O. Goma, S. A. D'Emic, C. P., Koester, Steven J. Canaperi, Donald F. Monney, Patricia M. Cordes, S. A. Speidell, James L. Anderson, R. M. and Philip Wong, H.S., IEEE Transactions on Electron Deviecs, Vol. 49, No. 9, September (2002).Google Scholar
9. Taraschi, G. Cheng, Z.Y. Currie, M. T. Leitz, C. W. Langdo, T. A. Lee, M. L. Pitera, A. Hoyt, J. L. Antoniadis, D. A. and Fitzgerald, E. A. Proceeding of the Tenth International Symposium on Silicon-on-Insulator Technology and Devices, (2001), p. 27.Google Scholar
10. Mizuno, Tomohisa, Sugiyama, Naoharu, Tezuka, Tsutomu, Numata, Toshinori, and Takagi, Shinichi, Ieee Transactions on Electron Devices, Vol. 50, No. 4, APRIL (2003).Google Scholar
11. Tezuka, T. Sugiyama, N. Takagi, S. and Kawakubo, T. “Dislocation-free formation of relaxed SiGe-on-insulator layers,” Appl. Phys. Lett., Vol. 80, no. 19, pp. 3560–3562, May (2002).Google Scholar
12. Tezuka, T. Sugiyama, N. and Takagi, S. Appl. Phys. Lett. 79, 1798 (2001).Google Scholar
13. Barin, I. Knacke, O. Thermochemical Properties of Inorganic Substances, Soinger, Berlin, (1973).Google Scholar
14. Kilpatrick, S.J. Jaccodine, R.J. Thompson, P. E. J. Appl. Phys. 81 8018 (1997).Google Scholar
15. Sugiyama, N. Tezuka, T. Mizuno, T. and Suzuki, M.. J. Appl. Phys., Vol. 95, No. 8, April (2004).Google Scholar
16. Ogino, M. Onabe, Y. and Watanabe, M. Phys. Status Solidi A 72, 535 (1982).Google Scholar
17. Sugiyama, N. Tezuka, T. Mizuno, T. and Suzuki, M. J. Appl. Phys. 95, 4007 (2004).Google Scholar