Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-19T02:08:03.178Z Has data issue: false hasContentIssue false
  • English
  • Français

Computational Fluid Dynamic Modeling and Flow Visualization of an Enclosed Wet Processing System

Published online by Cambridge University Press:  15 February 2011

Steven T. Bay ,
Christopher F. McConnell ,
Huw K. Thomas ,
Michael G. Izenson  and
Jayathi Murthi
Steven T. Bay
Affiliation:
CFM Technologies, Inc., 1381 Enterprise Dive, West Chester, PA 19380
Christopher F. McConnell
Affiliation:
CFM Technologies, Inc., 1381 Enterprise Dive, West Chester, PA 19380
Huw K. Thomas
Affiliation:
CFM Technologies, Inc., 1381 Enterprise Dive, West Chester, PA 19380
Michael G. Izenson
Affiliation:
Creare Inc., Etna Road, P.O. Box 71, Hanover, NH 03755
Jayathi Murthi
Affiliation:
Fluent Inc., Centerra Resource Park, 10 Cavendish Court, Lebanon, NH 03766
Get access

Abstract

With the goal of optimizing point-to-point etch uniformity in a continuous flow wet processing system, a comprehensive fluid dynamics study was undertaken. Aspects of this work included developing a computational, finite-element, fluid dynamic model; performing a series of empirical studies based on dye-injection with photo detection and video analysis; and observing platinumwire bubble generation with transparent wafers.

Various flow modification designs were tested including the base case of no inserted device, a stationary “spinner” insert, and a stationary “showerhead” insert. Unsteady, non-uniform, flow distribution and zones of substantial flow recirculation were observed in the case of using no flow modification device. These observations were confirmed with the computational fluid dynamic model.

Used in conjunction with the two different types of flow inserts, a new supplementary Teflon screen was designed and tested. The combined optimum configuration using this screen with an insert was then identified. Significantly enhanced point-to-point etch uniformity, with minimal recirculation and prompt fluid displacement, resulted from this design.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 35
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tonti, A., “Contamination by Impurities in Chemicals During Wet Processing,” in Proceedings of the Second International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, The ElectroChemical Society, p. 409, 1992.Google Scholar
2. Rosato, J.J., Walters, R.N., Hall, R.M., Lindquist, R.G., Spearow, R.G., and Helms, C.R., “Studies of Rinse Efficiencies in Wet Cleaning Tools,” in Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, The ElectroChemical Society, p. 94, 1993.Google Scholar
3. Kempka, S.N., Torczynski, J.R., Geller, A.S., Rosato, J.J., Walters, R.N., and Sibbett, S.S., “Evaluation of Overflow Wet Rinsing Efficiency,” in Conference Proceedings of MICRO '94, MICROCONTAMINATION, p. 225, 1994.Google Scholar
4. McConnell, C.F. and Walter, A.E., U.S. Patent No. 4 633 893 (1987), European Patent No. 0 233 184 (1988), Japanese Patent No. 1 592 557 (1988), and Korean Patent No. 028 929 (1989).Google Scholar