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Comparison of TiN films produced by TDEAT (Ti[N(C2H5)2]4), TDMAT (Ti[N(CH3)2]4), and a new precursor TEMAT (Ti[N(CH3)C2H5]4)

Published online by Cambridge University Press:  15 February 2011

J-G Lee ,
J-H Kim ,
H-K Shin ,
S-J Park ,
S-J Yun  and
G-H Kim
J-G Lee
Affiliation:
Department of Metallurgical Engineering, KOOKMIN University, Joengneung-dong, Sungbuk-ku, Seoul, Korea 136-702
J-H Kim
Affiliation:
Department of Metallurgical Engineering, KOOKMIN University, Joengneung-dong, Sungbuk-ku, Seoul, Korea 136-702
H-K Shin
Affiliation:
UPChem. INC. Jang Yeon Bldg. 325-5 Wonchun-dong, Paldal-gu, Suwon 136-702
S-J Park
Affiliation:
APEX Co., Ltd. 81-18, Ohjung-dong, Daeduk-gu, Daejun, Korea 306-010
S-J Yun
Affiliation:
ETRI, 161 Kajong-dong, Yusong-gu, Taeijon, Korea 305-360
G-H Kim
Affiliation:
ETRI, 161 Kajong-dong, Yusong-gu, Taeijon, Korea 305-360
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Abstract

TiN films have been deposited by chemical vapor deposition (CVD) from a new TiN precursor, tetrakis(ethylmethylamino)titanium (TEMAT), and compared with those from tetrakis(diethylamino)titanium (TDEAT) and tetrakis(dimethylamino)titanium (TDMAT) in terms of film quality and conformality. The TDEAT process at 350°C provides films with low resistivity of ˜2500μΩ-cm and 30% carbon. In addition, films deposited from TDEAT contain no oxygen and show good stability in resistivity with time. Furthermore, this process provides bottom-coverage ranging from 65% at 275°C to 30% at 350°C. In contrast, excellent bottom-coverage of ˜90% over 0.5μΩ contact holes is obtained by the TDMAT process. However, films deposited from TDMAT are air-reactive upon air-exposure, resulting in a large increase in resistivity when exposed to air. The use of TEMAT, possessing physical properties between those of TDMAT and TDEAT, allows less air-reactive and better crystalline films, compared with TiN films from TDMAT. It is also observed that the carbon level is ˜2x lower than that in TiN films from TDEAT. Futhermore, this process provides good step-coverage in 0.35μΩ contacts with an aspect ratio of 2.9. Consequently, the TEMAT process can be an attractive choice for sub-0.5 μΩ application.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 371
Copyright
Copyright © Materials Research Society 1996

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References

1. Fix, R. M., Gordon, R. G., and Hoffman, D. M., Chem. Mater. 2, 235, 1990.Google Scholar
2. Raaijmakers, I. J. and Ellwanger, R C. in Advanced Metallization for ULSI Applications, edited by Cale, T. S and Pintchovski, F. B(Mater.Res.Soc., Pittsburg, 1993), pp.325–331.Google Scholar
3. Hillman, J. T., Rice, M. J. Jr., Studiner, D. W., Foster, R. F., and Fiordalice, R. W. in the Proceedings of the 9th VLSI Multilevel Interconnection Conference, 1992, pp.246.Google Scholar
4. Intermann, A. and Koerner, H., J. Electrochem. Soc. Vol.140, No. 11, 3215, 1993.Google Scholar
5. Sugiyama, K., Pac, S., Takahashi, Y., and Motojma, S., J. Electrchem. Soc. Vol.122, No. 11, 1545, 1975.Google Scholar
6. Weber, A., Klages, C.-P., Gross, M. E., Charatan, R. M., and Brown, W. L. J. Electrochem. Soc., Vol.141, No. 6, L79, 1995.Google Scholar
7. Littau, K. A., Eizenberg, M., Ghanayem, S., Tran, H., Maeda, Y., Shinha, A., and Chang, M., Dixit, G., Jain, M. K, Chisholm, M. F., and Havemann, R. H., in the Proceedings of the 11th International VLSI Multilevel Interconnection Conference, 1994, pp. 440–442.Google Scholar
8. Littau, K., Dixit, G., Havemann, R. H., Semiconductor International, 1994, pp. 183–184.Google Scholar
9. Lee, J-G, Kim, J-H, Chi, C-S, Park, S-J, Lee, K-G, Kim, J-J, SPIE Vol.2636 Microelectronic Device and Multilevel Interconnection Technology 1995, pp. 244–251.Google Scholar
10. Jackson, R. L., Mcinemey, E. J., Roberts, B., Strupp, J., Velaga, A., Patel, S., and Halliday, L., in the Conference Proceedings ULSI-X, Materials Research Society, 1995, pp. 223–229.Google Scholar
11. Shin, H-K, Shin, H-J, Lee, J-G, Kang, S-W, and Ahn, B-T, submitted to Chem. Mater.Google Scholar