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Comparative Studies of the Structural, Electrical and Opto-Electronic Properties of Epitaxial GaAs Layers Grown On Either Si, Ge Or Ge Coated Si Substrates By Mocvd

Published online by Cambridge University Press:  28 February 2011

M. Abdul Awai ,
El Hang Lee ,
Eric Y. Chan ,
R.M. Lum ,
J.K. Klingert ,
T.T. Sheng ,
L.C. Hopkins  and
R.L. Opila
M. Abdul Awai
Affiliation:
AT&T Engineering Research Center P. O. Box 900, Princeton, NJ 08540
El Hang Lee
Affiliation:
AT&T Engineering Research Center P. O. Box 900, Princeton, NJ 08540
Eric Y. Chan
Affiliation:
AT&T Engineering Research Center P. O. Box 900, Princeton, NJ 08540
R.M. Lum
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
J.K. Klingert
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
T.T. Sheng
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L.C. Hopkins
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R.L. Opila
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

We report the epitaxial growth of GaAs films on bulk Si, Ge and Ge coated Si substrates by MOCVD. This work is directed at comparing the structural, electrical, optical and optoelectronic properties of the GaAs films grown on these substrates. The quality of the GaAs films was evaluated by a number of techniques including X-ray, TEM, RBS, I-V and C-V. We have also obtained good photoresponse for Au-GaAs/Si, Au-GaAs/Ge and Au-GaAs/Ge/Si Schottky diodes at 0.87μm. We have observed significant differences in defect density, strain, crystalline quality, structural order, doping density depth-profile, dark current, diode ideality factor, photoresponse, inter-diffusion and interface structure among these three different structures. The GaAs/Ge structure exhibited the best structural and electrical characteristics of all. The GaAs/Ge/Si structure showed material properties and Schottky diode performance that are better than those of the GaAs/Si stucture. Although Ge and Si both out-diffuse into GaAs, that the out-diffusion of Si into GaAs appears to cause more degradation in the electrical and optoelectronic properties of GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 241
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. See, for example, Fischer, R., Morkoc, H., Neumann, D. A., Zabel, H., Choi, C., Otsuka, N., Longerbone, M. and Erickson, L. P., J. Appl. Phys. 60(5), 1640 (1986)Google Scholar
2. See, for example, Choi, H. K., Turner, G. W., Tsaur, B.-Y. and Windhorn, T. W., Mat. Res. Soc. Symp. Proc. 67, 165(1986)Google Scholar
3. See, for example, Dupuis, R. D., Bean, J. C., Brown, J. M., Macrander, A. T., Miller, R. C. and Hopkins, L. C., J. Electr. Mat. 16(1), 69 (1986)Google Scholar
4. Abdul Awal, M., Lee, E. H., Chan, E. Y., Koos, G. L., Celler, G. K. and Sheng, T. T., Mat. Res. Soc. Symp. Proc. 67, 93 (1986)Google Scholar
5. See, for example, Sheldon, P., Yacobi, B. G., Jones, K. M. and Dunlavy, D. J., J. Appl. Phys. 58(11), 4186 (1985)Google Scholar
6. Abdul Awal, M., Lee, E. H. and Chan, E. Y. (to be published)Google Scholar
7. See, for example, Mazur, I. H., Marshburn, J., Henderson, T., Klem, J., Masselnik, W. T., Fischer, R. and Morkoc, H., Mat. Res. Soc. Symp. Proc. 67, 103 (1986)Google Scholar
8. Chan, E. Y., Abdul Awal, M., Lee, E. H., Lum, R. M. and Klingert, J. K., Ext. Abstr. of Int. Electr. Dev. Mtg., Los Angeles, Dec. 1986, pp. 96Google Scholar
9. Opila, R. L., Abdul Awal, M., Lee, E. H. and Lum, R. M., (to be published)Google Scholar
10. See, for example, Sharma, K., Dalby, R. and Rose, K., J. Appl. Phys. 56(10), 2703 (1984)Google Scholar