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Comparative Studies of Gate Oxides Using Thermal, Stacked Gate, and Rapid Thermal Oxidation

Published online by Cambridge University Press:  21 February 2011

S. Chittipeddi ,
P. K. Roy ,
V. C. Kannan ,
R. Singh  and
C. M. Dziuba
S. Chittipeddi
Affiliation:
AT&T Bell Laboratories, 555 Union Boulevard, Allentown, PA 18103
P. K. Roy
Affiliation:
AT&T Bell Laboratories, 555 Union Boulevard, Allentown, PA 18103
V. C. Kannan
Affiliation:
AT&T Bell Laboratories, 555 Union Boulevard, Allentown, PA 18103
R. Singh
Affiliation:
AT&T Bell Laboratories, 555 Union Boulevard, Allentown, PA 18103
C. M. Dziuba
Affiliation:
AT&T Bell Laboratories, 555 Union Boulevard, Allentown, PA 18103
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Abstract

In this paper we report on the quality of gate oxides obtained using three different oxidation techniques, namely thermal oxidation, rapid thermal oxidation and stacked gate oxidation. We report on the oxide thicknesses, the flatband voltage, threshold voltage, and QSS/Q values for MOS capacitors fabricated using these three techniques. We also fabricated MOSFET's using thermal oxides and stacked gate oxides, and find that the stacked gate oxides have a lower gate oxide defect density. Lattice images have also been obtained for the Si/SiO2 interface using transmission electron microscopy (TEM). We find that stacked oxide synthesis results in lower stresses and asperities at the interface relative to thermal and rapid thermal oxidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 327
Copyright
Copyright © Materials Research Society 1990

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References

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