Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-29T07:32:51.529Z Has data issue: false hasContentIssue false
  • English
  • Français

Combined Structural and Optical Assessment of CVD Grown 3C-SiC/Si

Published online by Cambridge University Press:  21 February 2011

Z. C. Feng ,
C. C. Tin ,
K. T. Yue ,
R. Hu ,
J. Williams ,
S. C. Liew ,
Y. G. Foo ,
S. K. L. Choo ,
W. E. Ng  and
S. H. Tang
Z. C. Feng
Affiliation:
Department of Physics, National University of Singapore, S0511, Singapore
C. C. Tin
Affiliation:
Department of Physics, Auburn University, Auburn, AL 36849–5311, USA
K. T. Yue
Affiliation:
Department of Physics, Emory University, Atlanta, GA 30322, USA
R. Hu
Affiliation:
Department of Physics, Auburn University, Auburn, AL 36849–5311, USA
J. Williams
Affiliation:
Department of Physics, Auburn University, Auburn, AL 36849–5311, USA
S. C. Liew
Affiliation:
Department of Physics, National University of Singapore, S0511, Singapore
Y. G. Foo
Affiliation:
Department of Physics, National University of Singapore, S0511, Singapore
S. K. L. Choo
Affiliation:
Department of Physics, National University of Singapore, S0511, Singapore
W. E. Ng
Affiliation:
Department of Physics, National University of Singapore, S0511, Singapore
S. H. Tang
Affiliation:
Department of Physics, National University of Singapore, S0511, Singapore
Get access

Abstract

A combined structural and optical assessment of cubic (3C-) SiC thin films grown on Si (100) substrates by chemical vapor epitaxy (CVD) is presented. The CVD growth was performed at both atmospheric and low (100 Torr) pressure, using a vertical reactor. The CVD-grown 3C-SiC films with different growth time were characterized by X-ray diffraction, Raman scattering and Fourier transform infrared (FTIR) spectroscopy to be single crystalline with a high degree of crystal perfection. The film thickness was determined from FTIR spectra. Variations of X-ray, FTIR and Raman spectra with different growth conditions and film thicknesses are studied comparatively. Related problems are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 417
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nishino, S., Powell, J. A. and Will, H. A., Appl. Phys. Lett. 42, 460 (1983).Google Scholar
2. Powell, J. A., Pirouz, P. and Choyke, W. J., in Feng, Z. C. ed., Semiconductor Interfaces, Microstructures and Devices: Properties and Applications, Institute of Physics Publishing, 1993, Bristol, pp 257–293.Google Scholar
3. Davis, R. F. and Glass, J. T., Advances in Solid-State Chemistry, 2, 1 (1991).Google Scholar
4. Yang, C. Y., Rahman, M. M. and Harris, G. L. ed. Amorphous and Crystalline Silicon Carbide IV, Springer-Verlag, 1992, Berlin.Google Scholar
5. Choyke, W. J., Feng, Z. C. and Powell, J. A., J. Appl. Phys. 64, 3163 (1988).Google Scholar
6. Feng, Z. C., Mascarenhas, A. J., Choyke, W. J. and Powell, J. A., J. Appl. Phys. 64, 3176, 6827 (1988).Google Scholar
7. Powell, J. A., Matus, L. G. and Kuczmarski, M. A., J. Electrochem. Soc. 134, 1558 (1987).Google Scholar
8. Stecki, A. J., Yuan, C., Li, J.P. and Loboda, M.J., Appl. Phys. Lett., 63, 3347 (1993).Google Scholar
9. Kim, H. J. and Davis, R. F., SPIE Vol. 794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, 183 (1991).Google Scholar
10. Foo, Y. G., Honours research report, supervised by Feng, Z. C., National University of Singapore, Materials Science, 1993/94.Google Scholar